Abstract: A total internal reflective (TIR) optic light bar of a lighting fixture configured to illuminate an object, such as a two-dimensional planar surface, the optic light bar including a body having a first end portion that extends to a second end portion through an elongated intermediate portion, the body including a light input surface extending between the first and second end portions, a total internal reflective (TIR) surface, and at least one light output surface, where the light output surface is formed as a gradual, continuous curve including a plurality of discrete segments that form a curvilinear surface, and where the TIR surface is composed of one or more of the discrete segments which form the curvilinear light output surface.

Abstract: A total internal reflective (TIR) optic light bar of a lighting fixture configured to illuminate an object, such as a two-dimensional planar surface, the optic light bar including a body having a first end portion that extends to a second end portion through an elongated intermediate portion, the body including a light input surface extending between the first and second end portions, a total internal reflective (TIR) surface, and at least one light output surface, where the light output surface is formed as a gradual, continuous curve including a plurality of discrete segments that form a curvilinear surface, and where the TIR surface is composed of one or more of the discrete segments which form the curvilinear light output surface.

Abstract: A total internal reflective (TIR) optic light bar includes a body having a first end portion that extends to a second end portion through an elongated intermediate portion. The body includes a light input surface having a curvilinear profile, a total internal reflective (TIR) surface, and at least one light output surface. The light input surface, TIR surface, and at least one light output surface defining a continuous outer surface of the body.

Abstract: A total internal reflective (TIR) optic light bar includes a body having a first end portion that extends to a second end portion through an elongated intermediate portion. The body includes a light input surface having a curvilinear profile, a total internal reflective (TIR) surface, and at least one light output surface. The light input surface, TIR surface, and at least one light output surface defining a continuous outer surface of the body.

Abstract: An optically reliable high refractive index (HRI) encapsulant for use with Light Emitting Diodes (LED's) and lighting devices based thereon. This material may be used for optically reliable HRI lightguiding core material for polymer-based photonic waveguides for use in photonic-communication and optical-interconnect applications. The encapsulant includes treated nanoparticles coated with an organic functional group that are dispersed in an Epoxy resin or Silicone polymer, exhibiting RI˜1.7 or greater with a low value of optical absorption coefficient ?<0.5 cm?1 at 525 nm. The encapsulant makes use of compositionally modified TiO2 nanoparticles which impart a greater photodegradation resistance to the HRI encapsulant.

Abstract: Light efficient packaging configurations for LED lamps using high refractive index encapsulants. The packaging configurations including dome (bullet) shaped LED's, SMD (surface mount device) LED's and a hybrid LED type, including a dome mounted within a SMD package. In another embodiment used with SMD LED devices a relatively small semi-hemispherical “blob” of HRI encapsulant surrounds the LED chip with the remainder of the SMD cavity filled with conventional encapsulant. The packaging configurations increase the LED's light emission efficiency at a reasonable cost and in a commercially viable manner, by maximizing the light efficiency while minimizing the amount of high refractive index encapsulant used.

Abstract: A flip chip light emitting diode die (10, 10?, 10?) includes a light-transmissive substrate (12, 12?, 12?) and semiconductor layers (14, 14?, 14?) that are selectively patterned to define a device mesa (30, 30?, 30?). A reflective electrode (34, 34?, 34?) is disposed on the device mesa (30, 30?, 30?). The reflective electrode (34, 34?, 34?) includes a light-transmissive insulating grid (42, 42?, 60, 80) disposed over the device mesa (30, 30?, 30?), an ohmic material (44, 44?, 44?, 62) disposed at openings of the insulating grid (42, 42?, 60, 80) and making ohmic contact with the device mesa (30, 30?, 30?), and an electrically conductive reflective film (46, 46?, 46?) disposed over the insulating grid (42, 42?, 60, 80) and the ohmic material (44, 44?, 44?, 62). The electrically conductive reflective film (46, 46?, 46?) electrically communicates with the ohmic material (44, 44?, 44?, 62).

Abstract: A light-emitting semiconductor device such as a laser or LED includes a light-emitting region interposed between two GaN contact layers of different conductivity types. A metal electrical contact is provided directly on one of the contact layers and is formed of an annealed, at least partly alloyed metal layer including hafnium and gold. The metal layer may also include platinum, or platinum and titanium. Light-emitting semiconductor devices such as light-emitting diodes and lasers having such annealed, at least partly alloyed metal layer are particularly suitable for high current-density applications which result in higher operating temperatures, such they are capable of operating at higher temperatures without shorting.

Abstract: A method of forming a laterally-varying charge profile in a silicon carbide substrate includes the steps of forming a silicon nitride layer on a polysilicon layer formed on the silicon carbide substrate, and patterning the silicon nitride layer to provide a plurality of silicon nitrite layer segments which are spaced apart in the lateral direction and which are provided with openings therebetween which are of varying widths. The polysilicon layer is oxidized using the layer segments as an oxidation mask to form a silicon dioxide layer of varying thickness from the polysilicon layer and to form a polysilicon layer portion therebeneath of varying thickness. The silicon dioxide layer and silicon nitride layer segments are removed, and a dopant is ion implanted into the silicon carbide substrate using the polysilicon layer portion of varying thickness as an implantation mask to form a laterally-varying charge profile in the silicon carbide substrate.

Abstract: Epitaxial layers of N-doped II-VI semiconductor compounds are grown on GaAs substrates by MOCVD using FME. Separating the growth and doping by alternating introduction of (1) the semiconductor cation and anion and (2) the cation and the dopant increases the level of doping, the level of activation, and the crystal quality.