Patents by Inventor Nikki Edleman

Nikki Edleman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact patterning method with transition etch feedback
    Patent number: 8236699
    Abstract: A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: August 7, 2012
    Assignees: Infineon North, Samsung Electronics Co., Ltd., International Business Machines Corporation, Chartered Semiconductor Manufacturing Ltd., Infineon Technologies AG
    Inventors: Byung-Goo Jeon, Sung-Chul Park, Nikki Edleman, Alois Gutmann, Fang Chen
  • Contact patterning method with transition etch feedback
    Patent number: 7998869
    Abstract: A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: August 16, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Goo Jeon, Sung-Chul Park, Nikki Edleman, Alois Gutmann, Fang Chen
  • CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK
    Publication number: 20110183443
    Abstract: A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
    Type: Application
    Filed: February 7, 2011
    Publication date: July 28, 2011
    Inventors: Byung-Goo Jeon, Sung-Chul Park, Nikki Edleman, Alois Gutmann, Fang Cheng
  • CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK
    Publication number: 20100112729
    Abstract: A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
    Type: Application
    Filed: October 31, 2008
    Publication date: May 6, 2010
    Inventors: Byung-Goo Jeon, Sung-Chul Park, Nikki Edleman, Alois Gutmann, Fang Chen
  • SELF-LIMITED METAL RECESS FOR DEEP TRENCH METAL FILL
    Publication number: 20050070064
    Abstract: Disclosed is a method of manufacturing a deep trench capacitor structure that forms a trench in a substrate, lines the trench with a polysilicon liner, and forms titanium nitride columns along the polysilicon liner. The method etches the titanium nitride columns using chlorine-based dry chemistry that is substantially isotropic. This etching process removes the upper portion of the titanium nitride columns without affecting the polysilicon liner. The etching process attacks only in the uppermost portion of the titanium nitride columns such that, after the etching process is completed, the remaining lower portions of the titanium nitride columns are substantially unaffected by the etching process. Then, the method fills the space between the titanium nitride columns and the upper portion of the trench with additional polysilicon material. The process of filling the space simultaneously forms a polysilicon plug and polysilicon cap.
    Type: Application
    Filed: September 25, 2003
    Publication date: March 31, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Nikki Edleman, Richard Wise