Patents by Inventor Niklas Bondestam
Niklas Bondestam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7833352Abstract: The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.Type: GrantFiled: March 6, 2003Date of Patent: November 16, 2010Assignee: ASM International N.V.Inventors: Niklas Bondestam, Janne Kesälä, Leif Keto, Pekka T. Soininen
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Patent number: 7374941Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.Type: GrantFiled: May 31, 2006Date of Patent: May 20, 2008Assignee: ASM Iternational N.V.Inventors: Niklas Bondestam, Menso Hendriks
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Publication number: 20060281184Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.Type: ApplicationFiled: May 31, 2006Publication date: December 14, 2006Inventors: Niklas Bondestam, Menso Hendriks
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Patent number: 6939579Abstract: The present invention relates to improved methods and apparatus for atomic layer deposition (ALD) of thin films on substrates such as wafers and flat panel displays. The invention provides an ALD reactor comprising a first temperature regulating system to control the temperature of the substrate and a second temperature regulating system to independently control the temperature of the reaction chamber walls. The invention also provides a method for ALD of a film onto a substrate in a reaction chamber, in which the temperature of the substrate is maintained to maximize ALD on the substrate while the temperature of the reaction chamber walls is set to minimize film growth thereon, whether by ALD, condensation, physisorption or thermal decomposition. The temperature of the walls may be maintained at the same temperature as the substrate, or higher or lower than the substrate temperature, depending upon the particular reaction being used.Type: GrantFiled: March 7, 2001Date of Patent: September 6, 2005Assignee: ASM International N.V.Inventors: Niklas Bondestam, Sven Lindfors
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Patent number: 6779378Abstract: A method for monitoring the capability of a source container comprising liquid or solid source material to produce vaporized source material comprises extracting vaporized source material from the source container. The source container is then isolated and a property indicative of the partial pressure of the vaporized source material is then measured as a function of time. The partial pressure (or property indicative thereof) as a function of time is compared with a reference partial pressure as a function of time. An alarm is generated when the difference between the measured property (indicative of partial pressure) as a function of time and the reference property value as a function of time is larger than a predetermined property difference limit. The property can be, for example, overall pressure or source material concentration in the gas phase.Type: GrantFiled: October 30, 2002Date of Patent: August 24, 2004Assignee: ASM International N.V.Inventor: Niklas Bondestam
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Publication number: 20040083787Abstract: A method for monitoring the capability of a source container comprising liquid or solid source material to produce vaporized source material comprises extracting vaporized source material from the source container. The source container is then isolated and a property indicative of the partial pressure of the vaporized source material is then measured as a function of time. The partial pressure (or property indicative thereof) as a function of time is compared with a reference partial pressure as a function of time. An alarm is generated when the difference between the measured property (indicative of partial pressure) as a function of time and the reference property value as a function of time is larger than a predetermined property difference limit. The property can be, for example, overall pressure or source material concentration in the gas phase.Type: ApplicationFiled: October 30, 2002Publication date: May 6, 2004Inventor: Niklas Bondestam
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Patent number: 6630030Abstract: A method and an apparatus for producing a thin film on a substrate. A substrate is placed in a reaction space and is subjected to alternately repeated surface reactions with at least two different reactants. The reactants are fed in the vapor phase repeatedly and alternately into the reaction space through tree-like piping having a plurality of channels and nozzle orifices, where the nozzle orifices are arranged in a plane perpendicular to the plane of the substrate. The apparatus includes a reaction chamber in which the substrate is placed, inflow piping having a plurality of channels and nozzle orifices, and outlet passages for removing the reaction products and excess reactants. The inflow piping has a tree-like shape and is contained in a plurality of interconnected plates. The nozzle orifices are arranged in an essentially planar fashion in a plane essentially perpendicular to the plane of the substrate.Type: GrantFiled: January 4, 2000Date of Patent: October 7, 2003Assignee: ASM Microchemistry Ltd.Inventors: Tuomo Suntola, Pekka Soininen, Niklas Bondestam
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Publication number: 20030150385Abstract: The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infred channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.Type: ApplicationFiled: March 6, 2003Publication date: August 14, 2003Inventors: Niklas Bondestam, Janne Kesala, Leif Keto, Pekka T. Soininen
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Publication number: 20030143747Abstract: A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant source to the reaction chamber, a valve positioned in communication with the reactant source such that switching of the valve induces vapor phase reactant pulses from the reactant source to the reaction chamber and a sensor positioned in communication with the reactant source and configured to provide a signal indicative of a characteristic parameter of the reactant pulse as a function of time. A curve is derived from the signal and the shape of the curve is monitored to determine changes in the curve shape over time during subsequent pulses.Type: ApplicationFiled: January 30, 2002Publication date: July 31, 2003Inventors: Niklas Bondestam, Menso Hendriks
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Patent number: 6579374Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.Type: GrantFiled: January 25, 2001Date of Patent: June 17, 2003Assignee: ASM Microchemistry OyInventors: Niklas Bondestam, Janne Kesälä, Leif Keto, Pekka T. Soininen
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Patent number: 6562140Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.Type: GrantFiled: May 10, 2000Date of Patent: May 13, 2003Assignee: ASM Microchemistry OyInventors: Niklas Bondestam, Janne Kesälä, Leif Keto, Pekka T. Soininen
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Publication number: 20020157611Abstract: The present invention relates to improved methods and apparatus for atomic layer deposition (ALD) of thin films on substrates such as wafers and flat panel displays. The invention provides an ALD reactor comprising a first temperature regulating system to control the temperature of the substrate and a second temperature regulating system to independently control the temperature of the reaction chamber walls. The invention also provides a method for ALD of a film onto a substrate in a reaction chamber, in which the temperature of the substrate is maintained to maximize ALD on the substrate while the temperature of the reaction chamber walls is set to minimize film growth thereon, whether by ALD, condensation, physisorption or thermal decomposition. The temperature of the walls may be maintained at the same temperature as the substrate, or higher or lower than the substrate temperature, depending upon the particular reaction being used.Type: ApplicationFiled: March 7, 2001Publication date: October 31, 2002Inventors: Niklas Bondestam, Sven Lindfors
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Publication number: 20010009140Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.Type: ApplicationFiled: January 25, 2001Publication date: July 26, 2001Inventors: Niklas Bondestam, Janne Kesala, Leif Keto, Pekka T. Soininen