Patents by Inventor Niko Railo

Niko Railo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9042142
    Abstract: The invention discloses a voltage source converter and a voltage source converter system. The voltage source converter comprises: a multi-level voltage source converter, being adapted to output a multiple levels of a first voltage at one of two first output terminals through a multiple of first conducting paths; a first energy store; and a first switching element, being arranged to directly connected with the first output terminal, and being adapted to switch the first energy store in or out of the first conducting path so as to combine a level of the voltage of the first energy store with the level of the first voltage as a second voltage output at a second output terminal. By having the topology as above, the voltage class of each of the power semiconductors can be kept lower with the number of the power semiconductors unchanged. Besides, VDRM is lowed as compared to conventional topology. This renders the reduction of the cost and the increase of the liability.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: May 26, 2015
    Assignee: ABB Technology Ltd.
    Inventors: Eryong Guan, Niko Railo, Aiping Wu
  • Publication number: 20130176014
    Abstract: The invention discloses a voltage source converter and a voltage source converter system. The voltage source converter comprises: a multi-level voltage source converter, being adapted to output a multiple levels of a first voltage at one of two first output terminals through a multiple of first conducting paths; a first energy store; and a first switching element, being arranged to directly connected with the first output terminal, and being adapted to switch the first energy store in or out of the first conducting path so as to combine a level of the voltage of the first energy store with the level of the first voltage as a second voltage output at a second output terminal. By having the topology as above, the voltage class of each of the power semiconductors can be kept lower with the number of the power semiconductors unchanged. Besides, VDRM is lowed as compared to conventional topology. This renders the reduction of the cost and the increase of the liability.
    Type: Application
    Filed: December 13, 2010
    Publication date: July 11, 2013
    Applicant: ABB TECHNOLOGY LTD.
    Inventors: Eryong Guan, Niko Railo, Aiping Wu