Patents by Inventor Nikolai Borisovich Zhitenev

Nikolai Borisovich Zhitenev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making to small devices having self-assembled organic layers
    Patent number: 7883933
    Abstract: In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: February 8, 2011
    Assignee: Alcatel-Lucent USA Inc.
    Inventor: Nikolai Borisovich Zhitenev
  • Forming electrodes to small electronic devices having self-assembled organic layers
    Publication number: 20100096623
    Abstract: In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described.
    Type: Application
    Filed: September 16, 2009
    Publication date: April 22, 2010
    Inventor: Nikolai Borisovich Zhitenev
  • Forming electrodes to small electronic devices having self-assembled organic layers
    Patent number: 7615779
    Abstract: In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: November 10, 2009
    Assignee: Alcatel-Lucent USA Inc.
    Inventor: Nikolai Borisovich Zhitenev
  • FORMING ELECTRODES TO SMALL ELECTRONIC DEVICES HAVING SELF-ASSEMBLED ORGANIC LAYERS
    Publication number: 20090242875
    Abstract: In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described.
    Type: Application
    Filed: March 23, 2006
    Publication date: October 1, 2009
    Inventor: Nikolai Borisovich Zhitenev