Abstract: A scanning mirror device comprises a mirror disposed on a mirror support. The scanning mirror device also includes a first pair of actuators comprising a first actuator and a second actuator. The first actuator is positioned on a first side of the mirror support. The second actuator is positioned on a second side of the mirror support opposite the first side of the mirror support. The first actuator and the second actuator are connected to the mirror support along a first axis of rotation. The scanning mirror device also includes a second pair of actuators comprising a third actuator and a fourth actuator. The third actuator is positioned on the first side of the mirror support. The fourth actuator is positioned on the second side of the mirror support. The third actuator and the fourth actuator are connected to the mirror support along a second axis of rotation.

Abstract: According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.

Abstract: According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.

Abstract: According to an example aspect of the present invention, there is provided a method comprising obtaining a first silicon wafer comprising a mask on a first side, attaching a second silicon wafer on the first side of the first silicon wafer, and etching one of the wafers to partially expose a window layer deposited on the opposite silicon wafer and to leave a structure defined by the mask supporting the window layer.

Abstract: According to an example aspect of the present invention, there is provided a method comprising obtaining a first silicon wafer comprising a mask on a first side, attaching a second silicon wafer on the first side of the first silicon wafer, and etching one of the wafers to partially expose a window layer deposited on the opposite silicon wafer and to leave a structure defined by the mask supporting the window layer.