Patents by Inventor Nikolai Maleev

Nikolai Maleev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • VCSEL and the fabrication method of the same
    Patent number: 7169629
    Abstract: A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: January 30, 2007
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Tsuo Wu, Jyh-Shyang Wang, Kun-Fong Lin, Nikolai A. Maleev, Daniil Alexandrovich Livshits
  • Resonant cavity device array for WDM application and the fabrication method of the same
    Patent number: 6993055
    Abstract: The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: January 31, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Jyh-Shyang Wang, Yi-Tsuo Wu, Nikolai A. Maleev, Alexey V. Sakharov, Alexey R. Kovsh
  • VCSEL and the fabrication method of the same
    Publication number: 20050074045
    Abstract: A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.
    Type: Application
    Filed: February 13, 2004
    Publication date: April 7, 2005
    Inventors: Yi-Tsuo Wu, Jyh-Shyang Wang, Kun-Fong Lin, Nikolai Maleev, D. Livshits
  • Resonant cavity device array for WDM application and the fabrication method of the same
    Publication number: 20040114645
    Abstract: The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.
    Type: Application
    Filed: March 25, 2003
    Publication date: June 17, 2004
    Inventors: Jyh-Shyang Wang, Yi-Tsuo Wu, Nikolai A. Maleev, Alexey V. Sakharov, Alexey R. Kovsh