Patents by Inventor Nikolai Shpackovsky

Nikolai Shpackovsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma display panel including sustain electrodes having double gap and method of manufacturing the panel
    Patent number: 7154221
    Abstract: A plasma display panel (PDP) and a method of manufacturing the panel includes sustain electrodes having a double gap structure and a predetermined resistance value. Each of the sustain electrodes includes a main electrode for sustaining a discharge and an auxiliary electrode for starting a low-voltage discharge without decreasing efficiency. A gap between auxiliary electrodes included in different sustain electrodes, respectively, is narrower than a gap between the different sustain electrodes. Each auxiliary electrode is formed between barrier ribs or immediately above a barrier rib. A ditch is formed in a dielectric layer covering the main electrodes and the auxiliary electrodes. The ditch is formed immediately above an auxiliary electrode.
    Type: Grant
    Filed: December 30, 2003
    Date of Patent: December 26, 2006
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Seung-hyun Son, Young-mo Kim, Hidekazu Hatanaka, Vassili Leniachine, Nikolai Shpackovsky, Sang-hun Jang, Mi-jeong Song, Hyo-june Kim, Gi-young Kim, Hyoung-bin Park
  • Plasma display panel including sustain electrodes having double gap and method of manufacturing the panel
    Publication number: 20040150340
    Abstract: A plasma display panel (PDP) and a method of manufacturing the panel includes sustain electrodes having a double gap structure and a predetermined resistance value. Each of the sustain electrodes includes a main electrode for sustaining a discharge and an auxiliary electrode for starting a low-voltage discharge without decreasing efficiency. A gap between auxiliary electrodes included in different sustain electrodes, respectively, is narrower than a gap between the different sustain electrodes. Each auxiliary electrode is formed between barrier ribs or immediately above a barrier rib. A ditch is formed in a dielectric layer covering the main electrodes and the auxiliary electrodes. The ditch is formed immediately above an auxiliary electrode.
    Type: Application
    Filed: December 30, 2003
    Publication date: August 5, 2004
    Inventors: Seung-hyun Son, Young-mo Kim, Hidekazu Hatanaka, Vassili Leniachine, Nikolai Shpackovsky, Sang-hun Jang, Mi-jeong Song, Hyo-june Kim, Gi-young Kim, Hyoung-bin Park