Abstract: The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to transparent N materials and/or to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

Abstract: The present disclosure relates to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis.

Abstract: The present disclosure relates to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis.

Abstract: The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to transparent N materials and/or to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

Abstract: The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to transparent N materials and/or to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

Abstract: The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to naphthalene diimide-based molecules and naphthalene diimide dimer-based molecules. The present disclosure relates to transparent N materials and/or to transparent P materials including the molecule(s) according to the present disclosure and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

Abstract: The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to transparent N materials and/or to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

Abstract: The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to naphtalene diimide-based molecules and naphtalene diimide dimer-based molecules. The present disclosure relates to transparent N materials and/or to transparent P materials including the molecule(s) according to the present disclosure and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

Abstract: The present invention relates to a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface and to a chip made of at least one such polymeric substrate. The present invention also relates to a method of providing a polymeric substrate with an etched-glass-like surface. Moreover, the present invention relates to a kit for manufacturing a chip using such polymeric substrate. Moreover, the present invention relates to the use of a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface for manufacturing a chip.

Abstract: Microelectronic device, comprising a substrate, a first electrode arranged above the substrate, a first resistive switch and a resistivity structure coupled with each other, wherein the first resistive switch and the resistivity structure are arranged in a single layer of the device, and a second electrode arranged above the layer that includes the first resistive switch and the resistivity structure, wherein the first resistive switch and the resistivity structure are coupled with the first and the second electrode.

Abstract: Microelectronic device, comprising a substrate, a first electrode arranged above the substrate, a first resistive switch and a resistivity structure coupled with each other, wherein the first resistive switch and the resistivity structure are arranged in a single layer of the device, and a second electrode arranged above the layer that includes the first resistive switch and the resistivity structure, wherein the first resistive switch and the resistivity structure are coupled with the first and the second electrode.

Abstract: Method of manufacture of an electronic device, comprising providing a substrate comprising a semiconductor device stack, depositing a first material layer over the substrate, the first material layer being an insulating layer, depositing an active organic material layer over the first material layer, depositing a second material layer over the active organic material layer, the second material layer being an insulating layer.

Abstract: The present invention relates to a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface and to a chip made of at least one such polymeric substrate. The present invention also relates to a method of providing a polymeric substrate with an etched-glass-like surface. Moreover, the present invention relates to a kit for manufacturing a chip using such polymeric substrate. Moreover, the present invention relates to the use of a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface for manufacturing a chip.

Abstract: Memory device, comprising a storage material, a first electrode connected to the storage material; and a second electrode associated to the storage material.

Abstract: The present invention relates to a method of producing an electret material, to a new class of electret materials and to a device comprising such electret materials.

Abstract: Semiconductor device, comprising a substrate with a first electrode and having a layer of organic material deposited over the substrate and the first electrode; and a second electrode deposited over the layer of organic material, wherein the second electrode comprises a dielectric layer that is separated from the layer of organic material by the material of the second electrode.

Abstract: Memory device, comprising a storage material, a first electrode connected to the storage material; and a second electrode associated to the storage material.

Abstract: Method of manufacture of an electronic device, comprising providing a substrate comprising a semiconductor device stack, depositing a first material layer over the substrate, the first material layer being an insulating layer, depositing an active organic material layer over the first material layer, depositing a second material layer over the active organic material layer, the second material layer being an insulating layer.

Abstract: The present invention relates to a method of producing an electret material, to a new class of electret materials and to a device comprising such electret materials.