Abstract: Described herein are manufacturing techniques for achieving stress isolation in microelectromechanical systems (MEMS) devices that involve isolation trenches formed from the backside of the substrate. The techniques described herein involve etching a trench in the bottom side of the substrate subsequent to forming a MEMS platform, and processing the MEMS platform to form a MEMS device on the top side of the substrate subsequent to etching the trench.

Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.

Abstract: A stress-isolated microelectromechanical systems (MEMS) device and a method of manufacture of the stress-isolated MEMS device are provided. MEMS devices may be sensitive to stress and may provide lower performance when subjected to stress. A stress-isolated MEMS device may be manufactured by etching a trench and/or a cavity in a first side of a substrate and subsequently forming a MEMS device on a surface of a platform opposite the first side of the substrate. Such a stress-isolated MEMS device may exhibit better performance than a MEMS device that is not stress-isolated. Moreover, manufacturing the MEMS device by first forming a trench and cavity on a backside of a wafer, before forming the MEMS device on a suspended platform, provides increased yield and allows for fabrication of smaller parts, in at least some embodiments.

Abstract: Microelectromechanical system (MEMS) inertial sensors exhibiting reduced parasitic capacitance are described. The reduction in the parasitic capacitance may be achieved by forming localized regions of thick dielectric material. These localized regions may be formed inside trenches. Formation of trenches enables an increase in the vertical separation between a sense capacitor and the substrate, thereby reducing the parasitic capacitance in this region. The stationary electrode of the sense capacitor may be placed between the proof mass and the trench. The trench may be filled with a dielectric material. Part of the trench may be filled with air, in some circumstances, thereby further reducing the parasitic capacitance. These MEMS inertial sensors may serve, among other types of inertial sensors, as accelerometers and/or gyroscopes. Fabrication of these trenches may involve lateral oxidation, whereby columns of semiconductor material are oxidized.