Patents by Inventor Nikolay Valentinovich Scherbakov

Nikolay Valentinovich Scherbakov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7823393
    Abstract: New Peltier semiconductor heat transfer systems are presented herein. In particular, Peltier heat transfer systems of Peltier semiconductor elements of highly unique shapes are arranged to bias the cooling side with respect to its size and consequently performance. In effect, a Peltier heat transfer system is created whereby the Peltier called side is greatly reduced in size and the Peltier hot side is greatly expanded in size. Such ‘high aspect ratio’ Peltier systems promote ‘focused’ cooling effect, which is particularly useful in conjunction with high-performance electronic devices having a small footprint. The entire cooling fact of the Peltier device is brought to the small space approximated by a point. Thus a ‘point’ heat source such as a semiconductor laser are high-performance light emitting diode is more effectively cooled by these systems.
    Type: Grant
    Filed: July 2, 2008
    Date of Patent: November 2, 2010
    Assignee: Light Engines Corporation
    Inventors: Vladimir Semenovich Abramov, Alexander Valerievich Shishov, Nikolay Valentinovich Scherbakov, Valeriy Petrovich Sushkov, Alexey Alexovich Ivanov
  • Publication number: 20090007571
    Abstract: New Peltier semiconductor heat transfer systems are presented herein. In particular, Peltier heat transfer systems of Peltier semiconductor elements of highly unique shapes are arranged to bias the cooling side with respect to its size and consequently performance. In effect, a Peltier heat transfer system is created whereby the Peltier called side is greatly reduced in size and the Peltier hot side is greatly expanded in size. Such ‘high aspect ratio’ Peltier systems promote ‘focused’ cooling effect, which is particularly useful in conjunction with high-performance electronic devices having a small footprint. The entire cooling fact of the Peltier device is brought to the small space approximated by a point. Thus a ‘point’ heat source such as a semiconductor laser are high-performance light emitting diode is more effectively cooled by these systems.
    Type: Application
    Filed: July 2, 2008
    Publication date: January 8, 2009
    Applicant: ACOL TECHNOLOGIES SA
    Inventors: Vladimir Semenovich Abramov, Alexander Valerievich Shishov, Nikolay Valentinovich Scherbakov, Valeriy Petrovich Sushkov, Alexey Alexovich Ivanov
  • Publication number: 20080315234
    Abstract: New combinations of semi-conductor devices in conjunction with optically active materials are set forth herein. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride construction are combined with high-performance optically active Langasite La3GasSi0i4 crystalline materials. When Langasite is properly doped, it will respond to the light output emissions of the diode by absorbing high energy photons therefrom and reemitting light of longer wavelengths. High-energy short wavelength light mixes with the longer wavelengths light to produce a broad spectrum which may be perceived by human observers as white light. Langasite, a relatively new material, enjoying great utility in frequency control and stabilization schemes has heretofore never been used in combination with optical emission systems.
    Type: Application
    Filed: November 7, 2006
    Publication date: December 25, 2008
    Applicant: ACOL TECHNOLOGIES SA
    Inventors: Nikolay Valentinovich Scherbakov, Naum Petrovich Sochin, Vladimir Semenovich Abramov, Alexander Valerievich Shishov