Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A method for matching a first OPE curve (700) for a first exposure apparatus (10A) used to transfer an image to a wafer (28) to a second OPE curve (702) of a second exposure apparatus (10B). The method can include the step of adjusting a tilt of a wafer stage (50) that retains the wafer to adjust the first OPE curve. As provided herein, the first exposure apparatus (10A) has the first OPE curve (700) because of the design of the components used in the first exposure apparatus (10A), and the second exposure apparatus (10B) has a second OPE curve (702) because of the design of the components used in the second exposure apparatus (10B). Further, the tilt of the wafer stage (50) can be selectively adjusted until the first OPE curve (700) approximately matches the second OPE curve (702). With this design, the two exposure apparatuses (10A) (10B) can be used for the same lithographic process.