Abstract: Techniques for adjusting the shape of an ion beam are described. Characteristics of a desired beam shape may be defined. The ion beam generator may include beam shaping elements associated with tunable parameters that can be set in combination with each other. A search space for the possible combinations is defined. A set of exploratory points in the search space are measured and used to interpolate a large number of interpolated points based on a regression model. Interpolated points that are associated with low confidence values may be measured. Based on the measured and interpolated points, clusters of tunable parameter combinations may be identified for evaluation. The clusters are evaluated for stability and sensitivity, and one of the clusters is selected based on the evaluation. The ion beam generator may be configured based on the selected cluster.

Abstract: A method of processing a workpiece to create a doped fin structure is disclosed. A portion of the workpiece is subjected to a pre-amorphizing implant to create an amorphized region. This amorphized region is then implanted with dopant species, at an implant energy and dose so that the dopant species are contained within the amorphized region. The doped amorphized region is then subjected to a laser melt anneal which crystallizes the amorphized region. The dopant profile is box-like, and the dopant is confined to the previously amorphized region.

Abstract: A method of processing a workpiece to create a doped fin structure is disclosed. A portion of the workpiece is subjected to a pre-amorphizing implant to create an amorphized region. This amorphized region is then implanted with dopant species, at an implant energy and dose so that the dopant species are contained within the amorphized region. The doped amorphized region is then subjected to a laser melt anneal which crystallizes the amorphized region. The dopant profile is box-like, and the dopant is confined to the previously amorphized region.

Abstract: A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species.

Abstract: A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species.