Abstract: The present invention relates to a method for performing chemical mechanical polishing. A high down-force step is performed. A low down-force step is performed. At least one of the down-force steps is modified, based on if one of the down-force steps exceeds an acceptable tolerance associated therewith. Other systems and methods are also disclosed.

Abstract: A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes at least some copper abutting the die surface. The method further comprises rinsing and drying the die.

Abstract: A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes at least some copper abutting the die surface. The method further comprises rinsing and drying the die.

Abstract: Post chemical mechanical polishing (CMP) cleaning methods are disclosed which reduce integrated circuit defects. A corrosion inhibitor is preferably applied during the post-CMP cleaning steps after application of a first chemistry. Subsequent to the application of the corrosion inhibitor a rinsing step using deionized water is employed. In this manner, the corrosion inhibitor applied during the post-CMP clean fills voids created in previous passivation layers by previous chemistries. Also, existing post-CMP equipment may be used to implement the preferred embodiments of the present invention. Preferably the corrosion inhibitor applied during the post-CMP clean is benzotriazole (BTA).

Abstract: An embodiment of the invention is an apparatus having a cleaning tank 2, a megasonic energy source 3, and an intake pipe 6 where a membrane contactor 9 is coupled to the intake pipe 6 to change the concentration of nitrogen gas in the deionized water 8 contained in intake pipe 6 to a range between 5.4% to 54% of saturation. Another embodiment is a method of changing the concentration of nitrogen gas in deionized water 8 to a range between 5.4% to 54% of saturation.