Abstract: An embodiment of the invention is an apparatus having a cleaning tank 2, a megasonic energy source 3, and an intake pipe 6 where a membrane contactor 9 is coupled to the intake pipe 6 to change the concentration of nitrogen gas in the deionized water 8 contained in intake pipe 6 to a range between 5.4% to 54% of saturation. Another embodiment is a method of changing the concentration of nitrogen gas in deionized water 8 to a range between 5.4% to 54% of saturation.

Abstract: Post chemical mechanical polishing (CMP) cleaning methods are disclosed which reduce integrated circuit defects. A corrosion inhibitor is preferably applied during the post-CMP cleaning steps after application of a first chemistry. Subsequent to the application of the corrosion inhibitor a rinsing step using deionized water is employed. In this manner, the corrosion inhibitor applied during the post-CMP clean fills voids created in previous passivation layers by previous chemistries. Also, existing post-CMP equipment may be used to implement the preferred embodiments of the present invention. Preferably the corrosion inhibitor applied during the post-CMP clean is benzotriazole (BTA).

Abstract: An embodiment of the invention is an apparatus having a cleaning tank 2, a megasonic energy source 3, and an intake pipe 6 where a membrane contactor 9 is coupled to the intake pipe 6 to change the concentration of nitrogen gas in the deionized water 8 contained in intake pipe 6 to a range between 5.4% to 54% of saturation. Another embodiment is a method of changing the concentration of nitrogen gas in deionized water 8 to a range between 5.4% to 54% of saturation.