Patents by Inventor Nils C. Fernelius

Nils C. Fernelius has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Modified gallium selenide crystals for high power nonlinear optical applications
    Patent number: 5980789
    Abstract: A new method for improving the mechanical properties and nonlinear optical performance characteristics of gallium selenide crystals (GaSe) is disclosed. A charge of GaSe crystals was doped with indium before being made into a crystal. The indium-doped GaSe crystals have improved physical properties in that they can be cut along the cleave planes and the cleaved surfaces polished without the usual delaminations typically observed in prior art pure GaSe crystals. The indium-doped crystals were tested in a second harmonic generation (SHG) system and found to have nearly twice the SHG efficiency as pure, or undoped, GaSe crystals.
    Type: Grant
    Filed: April 10, 1998
    Date of Patent: November 9, 1999
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Nils C. Fernelius, Narsingh B. Singh, Dennis R. Suhre, Vijay Balakrishna