Patents by Inventor Nils Jensen
Nils Jensen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8471337Abstract: An integrated circuit is disclosed having a semiconductor component comprising a first p-type region and a first n-type region adjoining the first p-type region, which together form a first pn junction having a breakdown voltage. A further n-type region adjoining the first p-type region or a further p-type region adjoining the first n-type region is provided, the first p-type or n-type region and the further n-type or p-type region adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.Type: GrantFiled: March 28, 2011Date of Patent: June 25, 2013Assignee: Infineon Technologies AGInventors: Nils Jensen, Marie Denison
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Patent number: 8368177Abstract: An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone.Type: GrantFiled: October 15, 2010Date of Patent: February 5, 2013Assignee: Infineon Technologies AGInventors: Andreas Peter Meiser, Gerhard Prechtl, Nils Jensen
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Publication number: 20110169564Abstract: An integrated circuit is disclosed having a semiconductor component comprising a first p-type region and a first n-type region adjoining the first p-type region, which together form a first pn junction having a breakdown voltage. A further n-type region adjoining the first p-type region or a further p-type region adjoining the first n-type region is provided, the first p-type or n-type region and the further n-type or p-type region adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.Type: ApplicationFiled: March 28, 2011Publication date: July 14, 2011Applicant: INFINEON TECHNOLOGIES AGInventors: Nils Jensen, Marie Denison
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Publication number: 20110089532Abstract: An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone.Type: ApplicationFiled: October 15, 2010Publication date: April 21, 2011Applicant: INFINEON TECHNOLOGIES AGInventors: Andreas Peter Meiser, Gerhard Prechtl, Nils Jensen
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Patent number: 7915676Abstract: The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining the first p-type region or a further p-type region (13) adjoining the first n-type region (11) is provided, the first p-type or n-type region (11) and the further n-type or p-type region (13) adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.Type: GrantFiled: July 21, 2005Date of Patent: March 29, 2011Assignee: Infineon Technologies AGInventors: Nils Jensen, Marie Denison
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Patent number: 7804135Abstract: An integrated semiconductor diode arrangement is provided. The arrangement includes an anode region and a cathode region that are formed in a semiconductor material region. The anode region has an arrangement of alternately occurring and directly adjacent first and second anode zones, which alternate in their conductivity type. The anode region furthermore has a first particular anode zone of the second conductivity type, the lateral extent of which is comparatively larger than that of the further anode zones of the same conductivity type.Type: GrantFiled: January 25, 2005Date of Patent: September 28, 2010Assignee: Infineon Technologies AGInventors: Nils Jensen, Andreas Meiser
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Patent number: 7253456Abstract: A diode structure having high ESD stability is described. Other embodiments provide an integral power switching arrangement having an integrated low leakage diode.Type: GrantFiled: October 29, 2004Date of Patent: August 7, 2007Assignee: Infineon Technologies AGInventor: Nils Jensen
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Publication number: 20070036655Abstract: The invention relates to methods of moving the rotating means of a wind turbine during transportation or stand still. The methods may comprise the steps of: securing at least one auxiliary device to a position and connecting said device to one or more shafts of the rotating means at the transportation or stand still. The auxiliary device being able to store, generate and/or convert energy during transportation, transferring energy continuously from said at least one auxiliary device to said one or more shafts of the rotating means during transportation or stand still, and moving said one or more shafts of the rotating means continuously or discontinuously from a position to another. The invention also relates to a nacelle for a wind turbine, an auxiliary device, a control system for controlling the moving of the rotating means of a wind turbine nacelle during transportation of the nacelle and use hereof.Type: ApplicationFiled: March 21, 2003Publication date: February 15, 2007Inventors: Soren Damgaard, Arne Haarh, Nils Jensen
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Publication number: 20060071236Abstract: The invention relates to an integrated circuit having a semiconductor component (10) comprising a first p-type region (12) and a first n-type region (11) adjoining the first p-type region (12), which together form a first pn junction having a breakdown voltage. According to the invention, a further n-type region adjoining the first p-type region or a further p-type region (13) adjoining the first n-type region (11) is provided, the first p-type or n-type region (11) and the further n-type or p-type region (13) adjoining the latter together forming a further pn junction having a further breakdown voltage, the first pn junction and the further pn junction being connected or connectable to one another in such a way that, in the case of an overloading of the semiconductor component, on account of a current loading of the first pn junction, first of all the further pn junction breaks down.Type: ApplicationFiled: July 21, 2005Publication date: April 6, 2006Applicant: Infineon Technologies AGInventors: Nils Jensen, Marie Denison
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Patent number: 7023028Abstract: An ESD protection structure for protecting an integrated circuit from electrostatic discharge, having a bipolar protection element, whose emitter is formed by an emitter zone of the first conduction type, whose collector is formed by a buried layer of the first conduction type, and whose base is formed by a base zone of the second conduction type disposed in-between. The base zone is spaced apart from the buried layer by an intermediate layer. Highly and lightly doped regions alternatively are provided in a section of the buried layer. The highly doped regions are spaced apart from one another by the lightly doped regions. A region with a reduced breakdown voltage of the protection element is disposed in a part of the protection element spaced apart from the section of the buried layer. Also provided is an integrated circuit having such an ESD protection structure.Type: GrantFiled: April 27, 2004Date of Patent: April 4, 2006Assignee: Infineon Technologies AGInventor: Nils Jensen
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Publication number: 20050189564Abstract: An integrated semiconductor diode arrangement is provided. The arrangement includes an anode region and a cathode region that are formed in a semiconductor material region. The anode region has an arrangement of alternately occurring and directly adjacent first and second anode zones, which alternate in their conductivity type. The anode region furthermore has a first particular anode zone of the second conductivity type, the lateral extent of which is comparatively larger than that of the further anode zones of the same conductivity type.Type: ApplicationFiled: January 25, 2005Publication date: September 1, 2005Inventors: Nils Jensen, Andreas Meiser
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Publication number: 20050104155Abstract: A diode structure having high ESD stability is described. Other embodiments provide an integral power switching arrangement having an integrated low leakage diode.Type: ApplicationFiled: October 29, 2004Publication date: May 19, 2005Inventor: Nils Jensen
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Publication number: 20040218335Abstract: An ESD protection structure for protecting an integrated circuit from electrostatic discharge, having a bipolar protection element, whose emitter is formed by an emitter zone of the first conduction type, whose collector is formed by a buried layer of the first conduction type, and whose base is formed by a base zone of the second conduction type disposed in-between. The base zone is spaced apart from the buried layer by an intermediate layer. Highly and lightly doped regions alternatively are provided in a section of the buried layer. The highly doped regions are spaced apart from one another by the lightly doped regions. A region with a reduced breakdown voltage of the protection element is disposed in a part of the protection element spaced apart from the section of the buried layer. Also provided is an integrated circuit having such an ESD protection structure.Type: ApplicationFiled: April 27, 2004Publication date: November 4, 2004Applicant: Infineon Technologies AGInventor: Nils Jensen