Patents by Inventor Nils Ogren

Nils Ogren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and device relating to semiconductor components
    Patent number: 6300173
    Abstract: A conductor 1 crossing a trench around an electrical component 1 is electrically connected to an isolated intermediate conducting region in order to move the field strength concentrations out of the electrical component and into the intermediate conducting region. This prevents avalanche breakdown occurring in the electrical component.
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: October 9, 2001
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: Anders Söderbärg, Nils Ögren, Håkan Sjödin, Ivar Hamberg
  • Bipolar transistor with polysilicon dummy emitter
    Patent number: 6153919
    Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 .mu.m or better can be achieved.
    Type: Grant
    Filed: January 26, 1999
    Date of Patent: November 28, 2000
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: H.ang.kan Sjodin, Anders Soderbarg, Nils Ogren, Ivar Hamberg, Dimitri Olofsson, Karin Andersson
  • Method relating to the manufacture of a semiconductor component
    Patent number: 6140194
    Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before masks are applied. This makes the positioning of masks less critical because they only have to be positioned within the area of the polysilicon layer. In this way, an accuracy of 0.1 .mu.m or better can be achieved.
    Type: Grant
    Filed: March 3, 1998
    Date of Patent: October 31, 2000
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: H.ang.kan Sjodin, Anders Soderbarg, Nils Ogren, Ivar Hamberg, Dimitri Olofsson, Karin Andersson
  • Semiconductor device provided with conductor electrically connected to conducting region
    Patent number: 6121668
    Abstract: A conductor crossing a trench around an electrical component is electrically connected to an isolated intermediate conducting region in order to move the field strength concentrations out of the electrical component and into the intermediate conducting region. This prevents avalanche breakdown from occurring in the electrical component.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: September 19, 2000
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: Anders Soderbarg, Nils Ogren, H.ang.kan Sjodin, Ivar Hamberg
  • Planar trenches
    Patent number: 6063693
    Abstract: Method for improving the topography over trench structures in which the provision of extra poly-semiconductor material e.g. polysilicon or nitrate or oxide in the regions of the trench edges and, if necessary, the subsequent oxidation of the extra material prevents the occurrence of regions of high mechanical stress.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: May 16, 2000
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: Anders Soderbarg, Nils Ogren, H.ang.kan Sjodin, Mikael Zackrisson
  • Method and apparatus for insulating material using trenches
    Patent number: 5977609
    Abstract: An island of material has an insulating trench structure. The trench structure includes a first insulating trench surrounded by a second insulating trench. The trenches are joined together by at least two transverse linking trenches.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: November 2, 1999
    Assignee: Telefonaktiebolaget LM Ericsson
    Inventors: Anders Soderbarg, Nils Ogren, H.ang.kan Sjodin, Mikael Zackrisson