Patents by Inventor Nima Alidoust

Nima Alidoust has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10256361
    Abstract: In one aspect, metal oxide compositions having electronic structure of multiple band gaps are described. In some embodiments, a metal oxide composition comprises a (Co,Ni)O alloy having electronic structure including multiple band gaps. The (Co,Ni)O alloy can include a first band gap and a second band gap, the first band gap separating valence and conduction bands of the electronic structure.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: April 9, 2019
    Assignee: THE TRUSTEES OF PRINCETON UNIVERSITY
    Inventors: Emily Ann Carter, Nima Alidoust, Martina Lessio
  • Patent number: 10079189
    Abstract: Disclosed herein is the formation of p-type transparent conducting oxides (TCO) having a structure of MgxNi1-xO or ZnxNi1-xO. These structures disrupt the two-dimensional confinement of individual holes (the dominant charge carrier transport mechanism in pure NiO) creating three-dimensional hole transport by providing pathways for hole transfer in directions that are unfavorable in pure NiO. Forming these structures preserves NiO's transparency to visible light since the band gaps do not deviate significantly from that of pure NiO. Furthermore, forming MgxNi1-xO or ZnxNi1-xO does not lead to hole trapping on O ions adjacent to Zn and Mg ions. The formation of these alloys will lead to creation of three-dimensional hole transport and improve NiO's conductivity for use as p-type TCO, without adversely affecting the favorable properties of pure NiO.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: September 18, 2018
    Assignee: THE TRUSTEES OF PRINCETON UNIVERSITY
    Inventors: Emily Ann Carter, Nima Alidoust
  • Publication number: 20170355615
    Abstract: Disclosed herein is the formation of p-type transparent conducting oxides (TCO) having a structure of MgxNi1-xO or ZnxNi1-xO. These structures disrupt the two-dimensional confinement of individual holes (the dominant charge carrier transport mechanism in pure NiO) creating three-dimensional hole transport by providing pathways for hole transfer in directions that are unfavorable in pure NiO. Forming these structures preserves NiO's transparency to visible light since the band gaps do not deviate significantly from that of pure NiO. Furthermore, forming MgxNi1-xO or ZnxNi1-xO does not lead to hole trapping on O ions adjacent to Zn and Mg ions. The formation of these alloys will lead to creation of three-dimensional hole transport and improve NiO's conductivity for use as p-type TCO, without adversely affecting the favorable properties of pure NiO.
    Type: Application
    Filed: June 8, 2017
    Publication date: December 14, 2017
    Applicant: The Trustees of Princeton University
    Inventors: Emily Ann Carter, Nima Alidoust
  • Publication number: 20170062641
    Abstract: In one aspect, metal oxide compositions having electronic structure of multiple band gaps are described. In some embodiments, a metal oxide composition comprises a (Co,Ni)O alloy having electronic structure including multiple band gaps. The (Co,Ni)O alloy can include a first band gap and a second band gap, the first band gap separating valence and conduction bands of the electronic structure.
    Type: Application
    Filed: August 29, 2016
    Publication date: March 2, 2017
    Inventors: Emily Ann CARTER, Nima Alidoust, Martina Lessio