Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Abstract: A lateral transistor tile is formed with first and second collector regions that longitudinally span first and second sides of the transistor tile; and a base region and an emitter region that are between the first and second collector regions and are both centered on a longitudinal midline of the transistor tile. A base-collector current, a collector-emitter current, and a base-emitter current flow horizontally; and the direction of the base-emitter current is perpendicular to the direction of the base-collector current and the collector-emitter current. Lateral BJT transistors having a variety of layouts are formed from a plurality of the tiles and share common components thereof.

Abstract: A lateral transistor tile is formed with first and second collector regions that longitudinally span first and second sides of the transistor tile; and a base region and an emitter region that are between the first and second collector regions and are both centered on a longitudinal midline of the transistor tile. A base-collector current, a collector-emitter current, and a base-emitter current flow horizontally; and the direction of the base-emitter current is perpendicular to the direction of the base-collector current and the collector-emitter current. Lateral BJT transistors having a variety of layouts are formed from a plurality of the tiles and share common components thereof.

Abstract: A lateral transistor tile is formed with first and second collector regions that longitudinally span first and second sides of the transistor tile; and a base region and an emitter region that are between the first and second collector regions and are both centered on a longitudinal midline of the transistor tile. A base-collector current, a collector-emitter current, and a base-emitter current flow horizontally; and the direction of the base-emitter current is perpendicular to the direction of the base-collector current and the collector-emitter current. Lateral BJT transistors having a variety of layouts are formed from a plurality of the tiles and share common components thereof.

Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Abstract: A lateral transistor tile is formed with first and second collector regions that longitudinally span first and second sides of the transistor tile; and a base region and an emitter region that are between the first and second collector regions and are both centered on a longitudinal midline of the transistor tile. A base-collector current, a collector-emitter current, and a base-emitter current flow horizontally; and the direction of the base-emitter current is perpendicular to the direction of the base-collector current and the collector-emitter current. Lateral BJT transistors having a variety of layouts are formed from a plurality of the tiles and share common components thereof.

Abstract: A lateral transistor tile is formed with first and second collector regions that longitudinally span first and second sides of the transistor tile; and a base region and an emitter region that are between the first and second collector regions and are both centered on a longitudinal midline of the transistor tile. A base-collector current, a collector-emitter current, and a base-emitter current flow horizontally; and the direction of the base-emitter current is perpendicular to the direction of the base-collector current and the collector-emitter current. Lateral BJT transistors having a variety of layouts are formed from a plurality of the tiles and share common components thereof.

Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Abstract: A thyristor tile includes first and second PNP tiles and first and second NPN tiles. Each PNP tile is adjacent to both NPN tiles, and each NPN tile is adjacent to both PNP tiles. A thyristor includes a plurality of PNP tiles and a plurality of NPN tiles. The PNP and NPN tiles are arranged in an alternating configuration in both rows and columns. The PNP tiles are oriented perpendicular to the NPN tiles. Interconnect layers have a geometry that enables even distribution of signals to the PNP and NPN tiles.

Abstract: A lateral transistor tile is formed with first and second collector regions that longitudinally span first and second sides of the transistor tile; and a base region and an emitter region that are between the first and second collector regions and are both centered on a longitudinal midline of the transistor tile. A base-collector current, a collector-emitter current, and a base-emitter current flow horizontally; and the direction of the base-emitter current is perpendicular to the direction of the base-collector current and the collector-emitter current. Lateral BJT transistors having a variety of layouts are formed from a plurality of the tiles and share common components thereof.