Abstract: A substrate support assembly is provided including: a susceptor assembly that includes an inner portion having an inner body, an outer rim disposed around the inner body, and a plurality of recessed portions, each recessed portion recessed relative to a lower surface of the inner body; and an outer portion positioned around the inner portion, the outer portion including an inner ledge. The outer rim of the inner portion is positioned on the inner ledge of the outer portion; and a first plurality of lift pins. Each lift pin of the first plurality of lift pins underlies one of the recessed portions of the inner portion of the susceptor assembly.

Abstract: The present disclosure relates to chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing. In one or more embodiments, a chamber kit for processing chambers applicable for semiconductor manufacturing includes a plate formed of a transparent material. The plate includes an opening formed in an outer face of the plate. The chamber kit includes a first calibration substrate positioned at least partially in the opening of the plate, and the first calibration substrate is formed of a first material. The chamber kit includes a second calibration substrate positioned at least partially in the opening of the plate, and the second calibration substrate is formed of a second material that is different than the first material.

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

Abstract: Embodiments described herein relate to a susceptor kit. The susceptor kit includes a susceptor support plate including a plurality of susceptor lift pin holes and a plurality of susceptor support holes, a plurality of susceptor supports recessed within the plurality of susceptor support holes and coupled to the susceptor support plate, and a lift pin assembly. The plurality of susceptor supports receive a plurality of susceptor support pins. The support body supports the support pin link in a spaced apart relation to the susceptor support plate. The lift pin assembly is received in the plurality of susceptor lift pin holes. The lift pin assembly includes a lift pin cap and a susceptor lift pin comprising a susceptor stop plate. The susceptor support plate stop is receivable within the susceptor lift pin holes.

Abstract: The present disclosure relates to methods and devices for processing substrates, suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes moving an isolation plate adjust one or more of: a height of the isolation plate, or an angle of the isolation plate such that the isolation plate moves to a non-parallel orientation relative to the substrate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate including guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for tuning the thermal profile on a substrate in the semiconductor processing chamber. The substrate processing chamber includes an upper body defining a processing volume, a heat source configured to heat the processing volume, a substrate envelope assembly disposed within the processing volume, and a substrate support assembly disposed within the substrate envelope assembly. The substrate processing chamber may also include a heat source disposed above the substrate support assembly and coupled to the upper body, an isolation plate assembly disposed between the substrate support assembly and the heat source, and a substrate envelope assembly. The substrate processing system may also include a pre-heat cylinder, the pre-heat cylinder includes a first replaceable portion with one or more inlet openings and a second replaceable portion with one or more outlet openings.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

Abstract: Embodiments of the present disclosure relate to projection stabilization systems and maskless lithography systems having projection stabilization systems. The projection stabilization system compensates for propagating vibrations that move image projection systems (IPS's). The IPS's are in a processing position prior to operation of the maskless lithography process. One or more stiffeners are coupled to the IPS. The one or more stiffeners apply pressure to flexures coupled to each stiffener. The flexures are coupled to the IPS to provide stabilization to the IPS during the operations of the maskless lithography process. For example, the one or more of stiffeners protect the IPS from vibrations that propagate through the system during operation.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: Embodiments of the present disclosure relate to measurement substrates and substrate support assemblies for property measurements. In one or more embodiments, a substrate support assembly includes a substrate support, and a first insert sized and shaped for positioning in a first opening of the substrate support. The first insert includes a first measurement region.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: The present disclosure relates to an auxiliary flow plate for process kits and semiconductor processing chambers, and related methods and flow guides. In one or more embodiments, a chamber kit includes a liner, a first plate, and a second plate. The liner includes an inner face, a first ledge disposed along the inner face, and a second ledge disposed along the inner face. The second ledge is spaced from the first ledge along the inner face. The first plate is sized and shaped to be disposed within the liner on the first ledge. The second plate is sized and shaped to be disposed within the liner on the second ledge.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

Abstract: The present disclosure relates to chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing. In one or more embodiments, a chamber kit for processing chambers applicable for semiconductor manufacturing includes a plate formed of a transparent material. The plate includes an opening formed in an outer face of the plate. The chamber kit includes a first calibration substrate positioned at least partially in the opening of the plate, and the first calibration substrate is formed of a first material. The chamber kit includes a second calibration substrate positioned at least partially in the opening of the plate, and the second calibration substrate is formed of a second material that is different than the first material.

Abstract: A method and apparatus for virtually sensing a temperature of a hardware component of semiconductor processing chamber are disclosed. In one or more embodiments, a method of operation for a processing chamber suitable for use in semiconductor manufacturing includes receiving a process recipe for a manufacturing process and monitoring a first temperature of a first hardware component of the processing chamber using a sensor. The method further includes synthesizing, using a model of the processing chamber, a first virtual temperature of a second hardware component of the processing chamber based on the received process recipe and the first temperature of the first hardware component.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for lamp heating in process chambers used to process semiconductor substrates. The apparatus includes a lamp for use in a processing chamber, the lamp having a lamp envelope with an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end. In another embodiment, the lamp assembly has at least one lamp, the at least one lamp having a lamp envelope having an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end.