Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: The present disclosure relates to an auxiliary flow plate for process kits and semiconductor processing chambers, and related methods and flow guides. In one or more embodiments, a chamber kit includes a liner, a first plate, and a second plate. The liner includes an inner face, a first ledge disposed along the inner face, and a second ledge disposed along the inner face. The second ledge is spaced from the first ledge along the inner face. The first plate is sized and shaped to be disposed within the liner on the first ledge. The second plate is sized and shaped to be disposed within the liner on the second ledge.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

Abstract: The present disclosure relates to chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing. In one or more embodiments, a chamber kit for processing chambers applicable for semiconductor manufacturing includes a plate formed of a transparent material. The plate includes an opening formed in an outer face of the plate. The chamber kit includes a first calibration substrate positioned at least partially in the opening of the plate, and the first calibration substrate is formed of a first material. The chamber kit includes a second calibration substrate positioned at least partially in the opening of the plate, and the second calibration substrate is formed of a second material that is different than the first material.

Abstract: A method and apparatus for virtually sensing a temperature of a hardware component of semiconductor processing chamber are disclosed. In one or more embodiments, a method of operation for a processing chamber suitable for use in semiconductor manufacturing includes receiving a process recipe for a manufacturing process and monitoring a first temperature of a first hardware component of the processing chamber using a sensor. The method further includes synthesizing, using a model of the processing chamber, a first virtual temperature of a second hardware component of the processing chamber based on the received process recipe and the first temperature of the first hardware component.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for lamp heating in process chambers used to process semiconductor substrates. The apparatus includes a lamp for use in a processing chamber, the lamp having a lamp envelope with an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end. In another embodiment, the lamp assembly has at least one lamp, the at least one lamp having a lamp envelope having an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end.

Abstract: A substrate support assembly is provided including: a susceptor assembly that includes an inner portion having an inner body, an outer rim disposed around the inner body, and a plurality of recessed portions, each recessed portion recessed relative to a lower surface of the inner body; and an outer portion positioned around the inner portion, the outer portion including an inner ledge. The outer rim of the inner portion is positioned on the inner ledge of the outer portion; and a first plurality of lift pins. Each lift pin of the first plurality of lift pins underlies one of the recessed portions of the inner portion of the susceptor assembly.

Abstract: The present disclosure relates to systems, apparatus, and methods for monitoring plate temperature for semiconductor manufacturing. In one or more embodiments, a system for processing substrates and applicable for semiconductor manufacturing includes a chamber body including one or more sidewalls. The system includes a lid and a window, the one or more sidewalls, the window, and the lid at least partially defining an internal volume. The system includes one or more heat sources configured to heat the internal volume, a substrate support disposed in the internal volume, and a first optical sensor configured to detect energy having a first wavelength that is less than 4.0 microns. The system includes a second optical sensor configured to detect energy having a second wavelength that is less than the first wavelength.

Abstract: The present disclosure relates to overlapping substrate supports and pre-heat rings, and related process kits, processing chambers, methods, and components to facilitate process adjustability. In one or more embodiments, a substrate support applicable for use in semiconductor manufacturing includes a first side face and a second side face opposing the first side face. The first side face includes a support surface. The second side face includes a backside surface, and a first shoulder protruding relative to the backside surface. The first shoulder is disposed outwardly of the backside surface. The substrate support includes an arcuate outer face extending between the first side face and the second side face.

Abstract: The present disclosure relates to methods and devices for processing substrates, suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes moving an isolation plate adjust one or more of: a height of the isolation plate, or an angle of the isolation plate such that the isolation plate moves to a non-parallel orientation relative to the substrate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate including guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: An apparatus, method, and system for calibrating substrate positioning and placement on a substrate support in a process chamber via imaging. In an embodiment, a calibrating substrate is provided. The calibrating substrate generally includes a top surface having a plurality of first marking features and a at least one edge marking feature configured to be detectable relative to the remaining portions of the top surface of the body by an imaging apparatus.

Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

Abstract: Embodiments of the present disclosure generally relate to a pre-heat ring for use in a substrate processing chamber, and related methods. A pre-heat ring including black quartz (such as formed of black quartz) facilitates material properties that can facilitate heating benefits. In one or more embodiments, a pre-heat ring applicable for use in a semiconductor processing chamber includes one or more ring segments. The one or more ring segments include an inner edge defining an inner dimension, an outer edge defining an outer dimension, a first side surface between the inner edge and the outer edge, and a second side surface between the inner edge and the outer edge. The second side surface is opposing the first side surface. The one or more ring segments include black quartz. The black quartz includes silicon dioxide (SiO2) impregnated with undoped silicon (Si).

Abstract: Embodiments of the present disclosure generally relate to apparatus and systems for in-situ film growth rate monitoring and include a system to monitor film growth on a substrate including a light source, a collimator, a dichroic mirror, and a filter all along a propagation path and in optical communication along the propagation path. The propagation path splits into a first sub-path and second sub-path at the dichroic mirror. The first sub-path is directed to a pyrometer, and the second sub-path is directed to a spectrometer.

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a disk and liner assembly includes a quartz disk having an outer diameter, a plurality of holes or slots formed in the quartz disk, and a quartz ring having an inner diameter less than the outer diameter of the quartz disk.

Abstract: The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing volume, a first window at a first perimeter of the processing volume, a substrate support within the processing volume; and a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximal the first window, and a second temperature at a second site proximal the substrate support.

Abstract: Embodiments of the present disclosure relate to projection stabilization systems and maskless lithography systems having projection stabilization systems. The projection stabilization system compensates for propagating vibrations that move image projection systems (IRS's). The IRS's are in a processing positon prior to operation of the maskless lithography process. One or more stiffeners are coupled to the IPS. The one or more stiffeners apply pressure to flexures coupled to each stiffener. The flexures are coupled to the IPS to provide stabilization to the IPS during the operations of the maskless lithography process. For example, the one or more of stiffeners protect the IPS from vibrations that propagate through the system during operation.

Abstract: An apparatus for heating a gas is described. The apparatus is a pre-heat ring and heater assembly positioned in a deposition chamber, such as an epitaxial deposition chamber. The pre-heat ring has a first portion configured to be heated using one or more heaters. The one or more heaters are disposed through a sidewall of the process volume beneath the pre-heat ring and are configured to heat the pre-heat ring so that gas flowed over the pre-heat ring is also heated before being flowed over a substrate. The one or more heaters may include two heaters disposed at distal ends of the first portion of the pre-heat ring. One or more temperature sensors are also configured to measure a temperature of the pre-heat ring.

Abstract: Embodiments described herein relate to a susceptor kit. The susceptor kit includes a susceptor support plate including a plurality of susceptor lift pin holes and a plurality of susceptor support holes, a plurality of susceptor supports recessed within the plurality of susceptor support holes and coupled to the susceptor support plate, and a lift pin assembly. The plurality of susceptor supports receive a plurality of susceptor support pins. The support body supports the support pin link in a spaced apart relation to the susceptor support plate. The lift pin assembly is received in the plurality of susceptor lift pin holes. The lift pin assembly includes a lift pin cap and a susceptor lift pin comprising a susceptor stop plate. The susceptor support plate stop is receivable within the susceptor lift pin holes.