Patents by Inventor Ninad Shinde

Ninad Shinde has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby
    Patent number: 9029071
    Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: May 12, 2015
    Assignee: Merck Patent GmbH
    Inventors: Ninad Shinde, Tatsuro Nagahara, Yusuke Takano
  • SILICON OXYNITRIDE FILM FORMATION METHOD AND SUBSTRATE EQUIPPED WITH SILICON OXYNITRIDE FILM FORMED THEREBY
    Publication number: 20140127630
    Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
    Type: Application
    Filed: June 22, 2011
    Publication date: May 8, 2014
    Applicant: AZ Electronic Materials USA Corp.
    Inventors: Ninad Shinde, Tatsuro Nagahara, Yusuke Takano
  • Silicon Oxynitride Film Formation Method and Substrate Equipped with Silicon Oxynitride Film Formed Thereby
    Publication number: 20130164690
    Abstract: The present invention provides a silicon oxynitride film formation method capable of reducing energy cost, and also provides a substrate equipped with a silicon oxynitride film formed thereby. This method comprises the steps of: casting a film-formable coating composition containing a polysilazane compound on a substrate surface to form a coat; drying the coat to remove excess of the solvent therein; and then irradiating the dried coat with UV light at a temperature lower than 150° C.
    Type: Application
    Filed: August 10, 2011
    Publication date: June 27, 2013
    Applicant: AZ Electronic Materials USA Corp.
    Inventors: Ninad Shinde, Tatsuro Nagahara, Yusuke Takano
  • Smart substance processing device and a system and method of monitoring thereof
    Publication number: 20050261839
    Abstract: A system and method for monitoring, controlling and recording the interactions of a substance interaction device with substances and/or other devices is disclosed. The system includes a substance interaction device, a robotic substance delivery system, and a computer. The substance interaction device stores data describing the device and interactions of the device with substances and/or other devices or systems. The computer obtains the data from the substance interaction device and monitors and controls interactions between the substance interaction device with substances or other devices, such as the robotic substance delivery system.
    Type: Application
    Filed: May 18, 2004
    Publication date: November 24, 2005
    Inventors: Ninad Shinde, Thomas Corso