Abstract: The present disclosure relates to resistive random-access memory (RRAM) devices. An RRAM device may include a first electrode, an interface layer fabricated on the first electrode, a switching oxide layer comprising at least one transition metal oxide; and a second electrode fabricated on the switching oxide layer. The interface layer may include a discontinuous layer of a dielectric material and a conductive material deposited in the discontinuous layer of the dielectric material. The interface layer is positioned between the first electrode and the switching oxide layer. The dielectric material may be and/or include Al2O3, SiO2, Si3N4, MgO, Y2O3, Gb2O3, Sm2O3, CeO2, Er2O3, La2O3, etc. The conductive material may include a metal, a conductive oxide, a conductive nitride, etc.

Abstract: A cleaning water tank includes a water tank housing and a switch assembly. The water tank housing includes a water storage cavity, a water injection port in a side of the water tank housing, and a water outlet in a bottom of the water tank housing. The water injection port and the water outlet are both communicated with the water storage cavity. The switch assembly is movably arranged to the water tank housing. The water storage cavity is configured to be isolated from an outside air, when the switch assembly is in a closed position, and the water storage cavity is configured to be communicated with the outside air to form a pressure difference, when the switch assembly is in an open position, to allow water in the water storage cavity to be discharged from the water tank housing via the water outlet under the action of the pressure difference.

Abstract: Systems and methods for mitigating defects in a crossbar-based computing environment are disclosed. In some implementations, an apparatus comprises: a plurality of row wires; a plurality of column wires connecting between the plurality of row wires; a plurality of non-linear devices formed in each of a plurality of column wires configured to receive an input signal, wherein at least one of the non-linear device has a characteristic of activation function and at least one of the non-linear device has a characteristic of neuronal function.

Abstract: A method for fabricating a forming-free resistive random-access memory (RRAM) device is provided. The method includes: fabricating an RRAM cell and annealing the RRAM cell. The RRAM cell includes: a bottom electrode, a switching oxide layer comprising at least one transition metal oxide; a top electrode, and an interface between the switching oxide layer and the top electrode. In some embodiments, the at least one transition metal oxide includes at least one of HfOx or TaOy, wherein x?2.0, and wherein y?2.5. The interface layer comprises a layer of at least one of Al2O3, MgO, Y2O3, or La2O3. The forming-free RRAM device may be switched to multiple resistance levels without a forming process.

Abstract: Provided are a fuse and a circuit system. The fuse includes: a housing, a closed chamber being provided in the housing and being filled with an arc extinguishing filler, and a first conductive terminal and a second conductive terminal which are used as a current input end and a current output end being respectively connected to the housing; a melt which is connected in series between the first conductive terminal and the second conductive terminal, at least part of the melt being disposed through the closed chamber; and an impact apparatus, which is arranged in the housing, is positioned outside the closed chamber, and is configured to act, when receiving an excitation signal, on the melt to generate an impact force to make the melt break in the closed chamber.

Abstract: The present disclosure provides an apparatus, including: a substrate; a bottom electrode formed on the substrate; a first base oxide layer formed on the bottom electrode; a first geometric confining layer formed on the first base oxide layer, wherein the first geometric confining layer comprises a first plurality of pin-holes; a second base oxide layer formed on the first geometric confining layer and connected to a first top surface of the first base oxide layer via the first plurality of pin-holes; and a top electrode formed on the second base oxide layer. The first base oxide layer includes TaOx, HfOx, TiOx, ZrOx, or a combination thereof. The first geometric confining layer comprises Al2O3, SiO2, Si3N4, Y2O3, Gd2O3, Sm2O3, CeO2, Er2O3, or a combination thereof.

Abstract: The present application provides an apparatus, including: a substrate; a first line electrode formed on the substrate; an interlayer formed on the first line electrode, a selector stack formed on the interlayer and the first line electrode; an RRAM stack formed on the selector stack; and a second line electrode formed on the RRAM stack. The interlayer comprises an upper surface and a sidewall. In some embodiments, a shape of the interlayer comprises a cylinder, a pyramid, a prism, a cone, a pillar, or a protrusion.

Abstract: In accordance with some embodiments of the present disclosure, an apparatus for performing convolution operations is provided. The apparatus includes a first crossbar circuit comprising a first plurality of cross-point devices; a second crossbar circuit comprising a second plurality of cross-point devices; and a word line logic to apply input signals to the first crossbar circuit and the second crossbar circuit. The word line logic is configured to provide input signals representative of input data to be convolved using one or more two-dimensional convolution kernels and one or more depth-wise convolution kernels. The first crossbar circuit is configured to output a first plurality of output signals representative of a convolution of the input data and the two-dimensional convolution kernels. The second crossbar circuit is configured to output a second plurality of output signals representative of a convolution of the input data and the depth-wise convolution kernels.

Abstract: Technologies relating to RRAM crossbar array circuits with specialized interface layers for the low current operations are disclosed. An example apparatus includes: a substrate; a bottom electrode formed on the substrate; a first layer formed on the bottom electrode; an RRAM oxide layer formed on the first layer and the bottom electrode; and a top electrode formed on the RRAM oxide layer. The first layer may be a continuous layer or a discontinuous layer. The apparatus may further comprise a second layer formed between the RRAM oxide layer and the top electrode. The second layer may be a continuous layer or a discontinuous layer.

Abstract: This application provides a service sharing method and system, and an electronic device. The method includes: A first device may display a chat interface with a first contact, where the chat interface includes an input box for a chat message. If it is detected that a user inputs a preset symbol into the input box, the first device displays a first device list. If it is detected that the user selects a second device from the first device list, the first device displays a service list provided by the second device, where the service list includes one or more services provided by the second device. If it is detected that the user selects a first service from the service list, the first device sends a first chat message in the chat interface, where the first chat message includes first service content corresponding to the first service selected by the user.

Abstract: In accordance with some embodiments of the present disclosure, an apparatus for performing convolution operations is provided. The apparatus includes a first crossbar circuit comprising a first plurality of cross-point devices; a second crossbar circuit comprising a second plurality of cross-point devices; and a word line logic to apply input signals to the first crossbar circuit and the second crossbar circuit. The word line logic is configured to provide input signals representative of input data to be convolved using one or more two-dimensional convolution kernels and one or more depth-wise convolution kernels. The first crossbar circuit is configured to output a first plurality of output signals representative of a convolution of the input data and the two-dimensional convolution kernels. The second crossbar circuit is configured to output a second plurality of output signals representative of a convolution of the input data and the depth-wise convolution kernels.

Abstract: An apparatus including a plurality of resistive random-access memory (RRAM) devices is provided. The RRAM devices are fabricated on a single substrate in some embodiments. The apparatus includes an interconnect layer fabricated on the substrate. A first RRAM device of the RRAM devices includes a first bottom electrode, a first top electrode; and a first filament-forming layer fabricated between the first bottom electrode and the first top electrode. A second RRAM device of the RRAM devices includes a second bottom electrode, a second top electrode, and a second filament-forming layer fabricated between the second bottom electrode and the second top electrode. The first bottom electrode and the second bottom electrode are fabricated on multiple metallic pads or metallic vias of the interconnect layer. The first filament-forming layer and the second filament-forming layer include different switching oxides.

Abstract: A scanner redirection method for a remote desktop system, wherein the remote desktop system includes a client computing device and a remote server, and the client computing device includes remote desktop software, includes the steps of: receiving from the remote server, settings that were selected by a user for adjusting an image that is to be created by an image capturing device; in response to receiving the selected settings from the remote server, transmitting to the image capturing device, at least a first setting of the selected settings from the remote server; and after the image capturing device creates the image, storing the image, wherein the first setting has been applied to the image by the image capturing device to adjust an effect of the image, and a second setting has been applied to the image by software of the remote desktop system to adjust another effect of the image.

Abstract: Technologies relating to RRAM crossbar array circuits with specialized interface layers for the low current operations are disclosed. An example apparatus includes: a substrate; a bottom electrode formed on the substrate; a first layer formed on the bottom electrode; an RRAM oxide layer formed on the first layer and the bottom electrode; and a top electrode formed on the RRAM oxide layer. The first layer may be a continuous layer or a discontinuous layer. The apparatus may further comprise a second layer formed between the RRAM oxide layer and the top electrode. The second layer may be a continuous layer or a discontinuous layer.

Abstract: The present disclosure provides a voltage divider circuit utilizing non-volatile memory devices. The non-volatile memory device may include, for example, a memristor device, an MRAM (Magnetoresistive random access memory) device, a phase-change memory (PCM) device, a floating gate, a spintronic device, etc. The voltage divider circuit may include one or more first non-volatile memory devices that form a resistor ladder. The resistor ladder may produce a plurality of reference voltages when the resistor ladder is connected between two voltages.

Abstract: The present disclosure provides a comparator including a non-volatile memory device. The comparator is configured to compare an analog input voltage and a reference voltage and produce a digital output indicative of the comparison result. The digital output may represent a resistance state of the non-volatile memory device in response to the application of the reference voltage and the analog input voltage to the comparator. The present disclosure further provides analog-to-digital converters (ADCs) utilizing the comparator. The non-volatile memory device includes, for example, a memristor device, an MRAM (Magnetoresistive random access memory) device, a phase-change memory (PCM) device, a floating gate, a spintronic device, etc.

Abstract: The disclosure discloses a global pressure acquisition system for a rotating model, including a CCD camera, a signal generator, a stroboscopic pulse LED light source, a photoelectric sensor, a preset counter, and a controller. The disclosure further discloses a global pressure acquisition method for a rotating model. The disclosure has the beneficial effects that, by using the non-contact measuring method disclosed by the present disclosure, a measured model and a flow field are not damaged, a submillimeter-level spatial resolution is achieved, it is ensured that the acquired PSP image of the rotating model is clear, and the signal to noise ratio of the image is increased.

Abstract: Surface pressure measurements on rotating models are important for flow phenomenon identification, understanding flow mechanisms and model aerodynamic design. The disclosure discloses a periodic pressure field measurement system based on the superposed lifetime of pressure sensitive paint, including pressure sensitive paint, a pulse light source, a camera, a synchronizer and a computer. A lifetime superposition method is disclosed in the disclosure for measuring periodic pressure fields of pressure sensitive paint.

Abstract: The disclosure discloses a measuring device for dynamic characteristics of pressure sensitive paint, including a PSP sample wafer, a dynamic pressure sensor, an oscilloscope, a light source, a photomultiplier tube, a bandpass filter, a loudspeaker, a power amplifier, and a signal generator. The disclosure further discloses a measuring method for dynamic characteristics of pressure sensitive paint. The disclosure has the following beneficial effects: by using the measuring device disclosed by the present disclosure, the continuous sinusoidal pressure wave with any frequency can be generated, and has the frequency precision that does not exceed 0.01 Hz, an optical path is not shielded, high stability is achieved, and the amplitude and phase characteristics of the pressure frequency of the PSP can be precisely captured.

Abstract: An electronic device and communication method are disclosed. The electronic device comprises a processing circuit configured to perform a pre-processing operation on a first one-dimensional sequence of modulation symbols, the pre-processing operation including: performing a dimension-increasing conversion to convert the first one-dimensional sequence of modulation symbols into a first multi-dimensional modulation symbol block; transforming the first multi-dimensional modulation symbol block into a second multi-dimensional modulation symbol block with a first transformation, wherein the first transformation couples each symbol in the first multi-dimensional modulation symbol block with each other; and performing a dimension-decreasing conversion to convert the second multi-dimensional modulation symbol block into a second one-dimensional sequence of modulation symbols, wherein the dimension-decreasing conversion is an inverse process of the dimension-increasing conversion.