Abstract: Semiconductor structures and methods are provided. An exemplary semiconductor structure includes a contact pad over a substrate, an under-bump metallization (UBM) layer over the contact pad, a metal pillar over first UBM layer and electrically coupled to the contact pad via the UBM layer, and a solder cap on the metal pillar. The metal pillar comprises copper, and a percentage of (111) crystal orientation of the copper is 90% or more.

Abstract: A method for making a semiconductor device includes forming a first fin structure including a first plurality of semiconductor layers vertically spaced from one another and over a substrate; forming a second fin structure including a second plurality of semiconductor layers vertically spaced from one another and over the substrate, the first and the second fin structures extend along a first lateral direction; forming a first dielectric structure extending into the substrate and parallel with the first and second fin structures, the second fin structure being separated from the first fin structure along a second lateral direction perpendicular to the first lateral direction, by a first distance; and forming a first gate structure that extends along the second lateral direction and wraps around each of the first plurality of semiconductor layers and each of the second plurality of semiconductor layers.

Abstract: Techniques for secure boot up of unified extensible firmware interface (UEFI) compliant devices are described. In an example, execution of a driver associated with a hardware component of a computing device may be detected during booting of the computing device. Based on the detection, a first driver hash of a system table of the UEFI may be computed, where the system table is a data structure that stores configuration details of the computing device and UEFI services. Thereafter, a second driver hash of the system table may be computed based on detection of completion of the execution of the driver. The first driver hash and the second driver hash may then be compared to determine tampering with the system table of the UEFI.

Abstract: The present invention discloses a system for providing mobile power, in which the required equipment for the power supply system at fracturing fields as well as connection cables and connection hoses are integrated properly, assigned onto three transport vehicles for movement and effectively connected. Intake components and a turbine generation system are combined on a first transport vehicle and installed together, then transported to customer sites directly, thus saving the installation time at the user sites. The two different designs on the locations of an exhaust stack and an exhaust silencer not only meet the requirements of road transportation, but also meet the requirements of exhaust gas emission during operations.

Abstract: A method includes forming a dielectric fin over a substrate between a first semiconductor fin and a second semiconductor fin. The first and second semiconductor fins, and the dielectric fin all extend along a first lateral direction. The method includes forming a dummy gate structure that extends along a second lateral direction and includes a first portion and a second portion. The first and second portions overlay the first and second semiconductor fins, respectively, and separate from each other with the dielectric fin. The method includes removing upper sidewall portions of the dielectric fin. The method includes replacing the first and second portions of the dummy gate structure with a first and second active gate structures, respectively.

Abstract: A method of forming a semiconductor device includes forming a first fin and a second fin protruding above a substrate; forming isolation regions on opposing sides of the first fin and the second fin; forming a metal gate over the first fin and over the second fin, the metal gate being surrounded by a first dielectric layer; and forming a recess in the metal gate between the first fin and the second fin, where the recess extends from an upper surface of the metal gate distal the substrate into the metal gate, where the recess has an upper portion distal the substrate and a lower portion between the upper portion and the substrate, where the upper portion has a first width, and the lower portion has a second width larger than the first width, the first width and the second width measured along a longitudinal direction of the metal gate.

Abstract: A method for making a semiconductor device includes: forming a first semiconductor fin structure and a second semiconductor fin structure over a substrate that both extend along a first lateral direction; forming a dummy gate structure that extends along a second lateral direction perpendicular to the first direction and straddles the first and second semiconductor fin structures; removing a portion of the dummy gate structure between the first and second semiconductor fin structures to form a trench, a width of the trench along the second direction decreasing with increasing depth toward the substrate; filling the trench with a dielectric material; and removing the second semiconductor fin structure and a portion of the dielectric material.

Abstract: A semiconductor device includes a dielectric fin between a first semiconductor channel and a second semiconductor channel. The semiconductor device includes a first gate structure. The first gate structure includes a first portion and a second portion separated from each other by the dielectric fin. The semiconductor device includes a first gate spacer that extends along sidewalls of the first portion of the first gate structure. The semiconductor device includes a second gate spacer that extends along sidewalls of the second portion of the first gate structure, respectively. At least one of the first gate spacer or second gate spacer has a first portion with a first thickness and a second portion with a second thickness less than the first thickness, and wherein the first portion is closer to the dielectric fin than the second portion.

Abstract: In some examples, a computing device comprises a processing resource and a memory resource storing instructions to cause the processing resource to detect, by a basic input/output system (BIOS) of the computing device, firmware corruption in a firmware component of the computing device, generate a recovery agent based on the detected firmware corruption of the firmware component, determine a location of a back-up image of the firmware component based on the generated recovery agent, determine recovery sequence based on the determination of the location of the back-up image of the firmware component; and recover the firmware of the firmware component by executing the determined recovery sequence.

Abstract: An air supply device, a gas turbine system and a using method thereof are disclosed. In the air supply device, an air intake compartment includes a connection end; a combustion air intake filter is located in the air intake compartment and connected with the combustion air intake filter; a combustion air intake interface is located on a tail plate and is connected with the combustion air silencer; and a sound insulation turnover mechanism includes a sound insulation flap and a turnover mechanism, the air intake compartment includes a first bottom plate and the tail plate that is located at the connection end, the sound insulation flap is located at the connection end, and the turnover mechanism is connected with the sound insulation flap, and is configured to drive the sound insulation flap to rotate relative to the tail plate.

Abstract: A method includes forming a dielectric fin over a substrate between a first semiconductor fin and a second semiconductor fin. The first and second semiconductor fins, and the dielectric fin all extend along a first lateral direction. The method includes forming a dummy gate structure that extends along a second lateral direction and includes a first portion and a second portion. The first and second portions overlay the first and second semiconductor fins, respectively, and separate from each other with the dielectric fin. The method includes removing upper sidewall portions of the dielectric fin. The method includes replacing the first and second portions of the dummy gate structure with a first and second active gate structures, respectively.

Abstract: This disclosure generally relates to power generation methods and systems based on gas turbine engines, and particularly to mobile and adaptive power generation systems and methods based on gas turbine engine for supplying mechanical and/or electrical power for fracturing operations at an oil wellsite. Various systems, platforms, components, devices, and methods are provided for flexibly and adaptively configure one of more gas turbines, hydraulic pumps, and electric generators to support both fracturing and electric demands at a well site. The disclosed implementations enable and facilitate a mobile, adaptive, and reconfigurable power system to provide both mechanical and electric power for hydraulic fracturing operation, which is convenient to set up for operation and for transport.

Abstract: A method of forming a semiconductor device includes forming a first fin and a second fin protruding above a substrate; forming isolation regions on opposing sides of the first fin and the second fin; forming a metal gate over the first fin and over the second fin, the metal gate being surrounded by a first dielectric layer; and forming a recess in the metal gate between the first fin and the second fin, where the recess extends from an upper surface of the metal gate distal the substrate into the metal gate, where the recess has an upper portion distal the substrate and a lower portion between the upper portion and the substrate, where the upper portion has a first width, and the lower portion has a second width larger than the first width, the first width and the second width measured along a longitudinal direction of the metal gate.

Abstract: An example non-transitory machine-readable medium includes recovery instructions that, when executed by a processor, cause the processor to detect a corruption of first installed instructions of first component firmware at a computing device and second installed instructions of second component firmware at the computing device. In response to detection of the corruption during pre-boot, if the first installed instructions are detected as corrupt, the recovery instructions request and receive first replacement instructions from a first network address, and replace in the computing device the first installed instructions with the first replacement instructions. If the second installed instructions are detected as corrupt, the recovery instructions request and receive second replacement instructions from a second network address different from the first network address, and replace in the computing device the second installed instructions with the second replacement instructions.

Abstract: A semiconductor device includes a substrate; a semiconductor fin structure disposed over the substrate, wherein the semiconductor fin structure extend along a first lateral direction; a gate structure that straddles a semiconductor fin structure, wherein the gate structure extends along a second lateral direction, the first lateral direction perpendicular to the second lateral direction; a dielectric fin structure that extends along the first lateral direction and is disposed next to the semiconductor structure fin structure; and a gate isolation structure disposed above the dielectric fin structure. The gate isolation structure contacts an upper portion of the gate structure at a first tilted interface.

Abstract: A semiconductor device includes a dielectric fin between a first semiconductor channel and a second semiconductor channel. The semiconductor device includes a first gate structure. The first gate structure includes a first portion and a second portion separated from each other by the dielectric fin. The semiconductor device includes a first gate spacer that extends along sidewalls of the first portion of the first gate structure. The semiconductor device includes a second gate spacer that extends along sidewalls of the second portion of the first gate structure. At least one of the first gate spacer or second gate spacer has a first portion with a first thickness and a second portion with a second thickness less than the first thickness, and wherein the first portion is closer to the dielectric fin than the second portion.

Abstract: Methods for forming a CPODE structure with reduced leakage current are disclosed herein. The CPODE structure is formed by etching away a pair of fins and forming a pair of trenches in the substrate where the pair of fins was originally located. A leakage path may be present in the area between the pair of fins. The etching is performed by cycling continuously plasma etch until the trenches are formed. The plasma etch removes any byproducts that may be formed during the fin etch which could reduce or stop the etching of the fins, the area between the pair of fins, and the substrate.

Abstract: A preparation process and LED application of copper nanoclusters (Cu NCs) fluorescent nanoflowers with high quantum yield by dissolving Cu4I4 into dimethyl sulfoxide (DMSO) and then adding glycerol, it self-assembles into Cu NCs s fluorescent nanoflowers. The Cu4I4 fluorescent nanoflowers prepared by the invention have outstanding optical properties, a quantum yield up to 64.5%, and can be made into a series of different luminous colors and excellent stability LED only with commercial blue phosphor, such as yellow-green, sky blue, white, wherein according to the mass ratio of 4:5 ratio mix can be prepared white light emission LED. Fluorescent Cu NCs can successfully replace traditional light conversion materials and prepare environmentally friendly LEDs.

Abstract: Example approaches for customization of thermal and power policies in computers, are described. In an example, a microcontroller of a computing system, also referred to as system, validates thermal policy custom data stored in a firmware storage medium of the system, in response to a supply of power to the system. On a successful validation of the thermal policy custom data, thermal control settings is updated with a customized thermal policy included in the thermal policy custom data. In response to initiation of a boot operation of the system, a processor of the system validates power policy custom data stored in the firmware storage medium. In response to a successful validation of the power policy custom data during the boot operation, the processor updates power control settings of the system with a customized power policy included in the power policy custom data.

Abstract: An air supply device, a gas turbine system and a using method thereof are disclosed. In the air supply device, an air intake compartment includes a connection end; a combustion air intake filter is located in the air intake compartment and connected with the combustion air intake filter; a combustion air intake interface is located on a tail plate and is connected with the combustion air silencer; and a sound insulation turnover mechanism includes a sound insulation flap and a turnover mechanism, the air intake compartment includes a first bottom plate and the tail plate that is located at the connection end, the sound insulation flap is located at the connection end, and the turnover mechanism is connected with the sound insulation flap, and is configured to drive the sound insulation flap to rotate relative to the tail plate.