Abstract: A battery, including a housing enclosed to form a chamber and including a first side plate; a cell located in the chamber and provided with a first tab; a first adapter electrically connected with the first tab and disposed between the first side plate and the cell, and a projection of the first adapter on the first side plate does not overlap with a projection of the first tab on the first side plate. The embodiments can improve the battery performance such as energy density.

Abstract: The present application relates to an aqueous positive electrode sheet, which may include a current collector and a positive electrode active substance layer provided on at least one surface of the current collector, the positive electrode active substance layer may include an aqueous binder, where the porosity of a surface area of the positive electrode active substance layer may be greater than the porosity of an inner area of the positive electrode active substance layer, and the average particle size of the positive electrode active material in the surface area may be greater than the average particle size of the positive electrode active material in the inner area. The present application further relates to a secondary battery including the aqueous positive electrode sheet, a battery pack including the secondary battery, and a power consumption apparatus including the battery pack.

Abstract: The present disclosure relates to methods, devices, and systems for invoking a capability of another device. In one example method, a source end device requests capability information of a sink end device. The sink end device sends the capability information to the source end device. The source end device sends first content and first request information to the sink end device when detecting a first operation of a user, where the first request information is used to request the sink end device to process the first content by using a first function. The sink end device processes the first content based on the first request information by using the first function, and sends a processing result of the first content to the source end device. The source end device prompts the user with the processing result.

Abstract: Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. The methods described herein allow for complex shapes (e.g., “L-shaped”) to be etched into a multi-layered stack to form fins used in the formation of active regions of the GAA nanostructure transistor structures. In some embodiments, the active regions may be formed with a first channel width and a first source/drain region having a first width and a second channel width and a second source/drain region having a second width that is less than the first width.

Abstract: A mobile device supports carrier phase based positioning using positioning signals received from positioning signals from a plurality of satellites in a satellite positioning system (SPS). In the presence of a discontinuous carrier phase, e.g., if a cycle slip is detected, the mobile device is configured to generate a continuous carrier phase using the device history of the mobile device. The mobile device, for example, may track the carrier phase of positioning signals and determine a position estimate for the mobile device at a first time. If a cycle clip of the carrier phase is detected at a second time, the mobile device resolves the integer ambiguity in the carrier phase at the second time based on the carrier phase and position estimate for the mobile device from the first time.

Abstract: Provided are a high quality silicon carbide seed crystal, a silicon carbide crystal, a silicon carbide substrate, and a preparation method therefor. A high quality silicon carbide seed crystal is prepared, the dopant concentrations of a thermal insulation material, a graphite crucible, and a silicon carbide powder material are controlled, a specific crystal growth process and a wafer machining means are integrated, and a high quality silicon carbide substrate is obtained. The obtained silicon carbide substrate has a high crystalline quality and an extremely low amount of micropipes, screw dislocation density, and compound dislocation density; said substrate also has an extremely low p-type dopant concentration, exhibits superior electrical performance, and has a high surface quality.

Abstract: A method of forming a semiconductor device includes: forming a fin structure protruding above a substrate, where the fin structure comprises a fin and a layer stack overlying the fin, where the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin structure; forming openings in the fin structure on opposing sides of the dummy gate structure, where the openings extend through the layer stack into the fin; forming a dielectric layer in bottom portions of the openings; and forming source/drain regions in the openings on the dielectric layer, where the source/drain regions are separated from the fin by the dielectric layer.

Abstract: Described are methods, systems, and devices for correcting ionospheric error. In some aspects, a mobile device equipped with a Global Navigation Satellite System (GNSS) receiver is configured to determine a positioning measurement of a GNSS signal. The mobile device is further configured to receive augmentation data from an augmentation system. When the mobile device is unable to obtain newer augmentation data, the mobile device can instead obtain augmentation data associated with historical Total Electron Content (TEC) values. In such instances, the augmentation data will have been generated to represent ionospheric delay during a time period that ended before the augmentation data is obtained. Based on the augmentation data associated with historical TEC values and a pierce point of the received GNSS signal, an ionospheric error in the positioning measurement of the GNSS signal can be determined and corrected.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a semiconductor fin having a first portion having a first width and a second portion having a second width substantially less than the first width. The first portion has a first surface, the second portion has a second surface, and the first and second surfaces are connected by a third surface. The third surface forms an angle with respect to the second surface, and the angle ranges from about 90 degrees to about 130 degrees. The structure further includes a gate electrode layer disposed over the semiconductor fin and source/drain epitaxial features disposed on the semiconductor fin on opposite sides of the gate electrode layer.

Abstract: The present invention relates to the field of medicine, and specifically relates to a triazine compounds as represented by formula (I), or a stereoisomer, a tautomer, a nitrogen oxide, a solvate, or a pharmaceutically acceptable salt thereof, a pharmaceutical composition containing the compound, and use of the compound and the pharmaceutical composition thereof in the preparation of drugs for treating and/or preventing proliferative disease, autoimmune diseases, allergic diseases, inflammatory diseases, transplant rejection, cancers, viral infectious diseases, or other diseases in mammals. The compound provided by the present invention exhibits excellent inhibitory activity and kinase selectivity against a target kinase.

Abstract: The present invention provides two forms of information interaction mechanisms and network transmission methods in a multimedia system. One is implementing bidirectional quick information interaction by using an interaction message body, so that the defect that there is no efficient and flexible bidirectional information interaction mechanism in existing media transmission systems can be overcome, and the mechanism is applicable to all media transmission systems. The other one is simplifying the size of protocol format header data for a simplest data packet forced by a protocol transmission format, so that the protocol format is quickly adapted to quick information interaction. The simplifying the size of protocol format header data can overcome the defect that there is no efficient bidirectional quick information interaction mechanism in the existing media transmission systems. In addition, an optimized transmission mechanism for a still image in a video stream is provided.

Abstract: A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first fin, a second fin adjacent the first fin, and a third fin adjacent the second fin. The structure further includes a first source/drain epitaxial feature merged with a second source/drain epitaxial feature. The structure further includes a third source/drain epitaxial feature, and a first liner positioned at a first distance away from a first plane defined by a first sidewall of the first fin and a second distance away from a second plane defined by a second sidewall of the second fin. The first distance is substantially the same as the second distance, and the merged first and second source/drain epitaxial features is disposed over the first liner. The structure further includes a dielectric feature disposed between the second source/drain epitaxial feature and the third source/drain epitaxial feature.

Abstract: A user equipment (UE) is configured to request connection to a selected one of a plurality of available network slices of a network system. The UE implements a permission control framework that allows individual applications to request connection to the selected network slice, but establishes the connection only when the framework determines, based on any of a variety of permission criteria, that the application is permitted to access the requested network slice. The UE also supports user selection of the network slice via a graphical user interface that presents a selectable list of available network slices.

Abstract: A compact LiDAR device is provided. The compact LiDAR device includes a first mirror disposed to receive one or more light beams and a polygon mirror optically coupled to the first mirror. The polygon mirror comprises a plurality of reflective facets. For at least two of the plurality of reflective facets, each reflective facet is arranged such that: a first edge, a second edge, and a third edge of the reflective facet correspond to a first line, a second line, and a third line; the first line and the second line intersect to form a first internal angle of a plane comprising the reflective facet; and the first line and the third line intersect to form a second internal angle of the plane comprising the reflective facet. The first internal angle is an acute angle; and the second internal angle is an obtuse angle.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method of a semiconductor structure includes: providing an initial semiconductor structure, where the initial semiconductor structure includes a substrate and a polycrystalline silicon layer; forming a first mask layer on the initial semiconductor structure, where the first mask layer has a first ion implantation window, and the first ion implantation window defines a position of a gate electrode of a first transistor; and performing a first ion implantation process to perform work function adjustment on the gate electrode of the first transistor through the first ion implantation window, to form a semiconductor structure.

Abstract: A manufacturing method for a test structure includes: providing a substrate, and forming a gate dielectric film and a conductive film being stacked successively on the substrate; patterned etching at least the conductive film to form a plurality of gate structures discretely located on the substrate, the distance between adjacent gate structures in an arrangement direction of the gate structure being less than or equal to 110 nm; forming isolation sidewalls on two opposite sides of the gate structures; and, implanting doping ions into the substrate to form doped regions by taking the gate structures and the isolation sidewalls as masks, the distance between the doping depth of the doped regions and the top surface of the substrate in a direction perpendicular to the surface of the substrate being less than 10 nm.

Abstract: A memory array that includes a plurality of storage cells, a plurality of bit lines, a plurality of memory transistor word lines and a plurality of selection transistor word lines, wherein the storage cells form an array of M rows*N columns; each storage cell includes a selection transistor and a memory transistor connected in series; a source and a gate of each selection transistor are connected, and the gates of the selection transistors in the same row are connected to a corresponding selection transistor word line.

Abstract: Compositions and methods are provided for the introduction and the regulated expression of genes in plants. Compositions include promoter constructs that provide a level of activity useful for the regulated expression of site-specific recombinases, while avoiding premature excision. Further provided are isolated polynucleotides encoding novel babyboom polypeptides, expression cassettes, and plants comprising the same. Methods for the introduction of genes into plants are provided, including methods for plastid transformation and methods for the transformation of tissues from mature seeds and leaves.

Abstract: An embedded SONOS memory and a method for making the same. The method includes: forming a connecting layer on one side of a selection transistor polysilicon gate; forming a second silicon oxide layer and an ONO charge storage layer on the other side of the selection transistor polysilicon gate far away from the connecting layer; then forming a memory transistor polysilicon gate on the side of the second silicon oxide layer far away from the connecting layer, so as to obtain the selection transistor polysilicon gate and the memory transistor polysilicon gate in a back-to-back structure.