Abstract: Disclosed are a shift register unit, a gate drive circuit and a display device. The shift register unit includes: the input circuit provides the signal of the input signal end to the first node; the reset circuit provides the signal of the first reference signal end to the first node in response to the signal of the reset signal end; the control circuit controls the signals of the first node and the second node, and the output circuit provides the signal of the clock signal end to the drive output end in response to the signal of the first node, and provides the signal of the second reference signal end to the drive output end in response to the signal of the second node; the signal of the first reference signal end and the signal of the second reference signal end are loaded independently of each other.

Abstract: An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate includes common electrodes, multiple first common electrode lines and multiple second common electrode lines. The multiple first common electrode lines intersect with the multiple second common electrode lines to form grids. The multiple first common electrode lines are connected with the common electrodes through first via-holes and the multiple second common electrode lines are connected with the common electrodes through second via-holes.

Abstract: An array substrate includes: a plurality of touch units arranged in an array and insulated from each other; each of the plurality of touch units including at least one electrode block arranged in an array and connected to each other; and a plurality of touch lines; wherein the touch units and the touch lines are connected in a one-to-one correspondence by direct overlap. Also disclosed are a touch display panel and a method for manufacturing the array substrate.

Abstract: A packaged RF amplifier device includes input and output leads and a transistor die. The transistor die includes a transistor with a drain-source capacitance below 0.1 picofarads per watt. The device also includes a conductive connection between the transistor output terminal and the output lead, and a baseband termination circuit between the transistor output terminal and a ground reference node. The baseband termination circuit presents a low impedance to signal energy at envelope frequencies and a high impedance to signal energy at RF frequencies. The baseband termination circuit includes an inductive element, a resistor, and a capacitor connected in series between the transistor output terminal and the ground reference node. Except for a minimal impedance transformation associated with the conductive connection, the device is unmatched between the transistor output terminal and the output lead by being devoid of impedance matching circuitry between the transistor output terminal and the output lead.

Abstract: A frequency controller for operating a switching power converter is provided. The frequency controller includes an output circuit, an operation signal generator, and a transition signal generator. The output circuit is to connect to a switching power converter. The startup signal generator is connected to the output circuit via a first connection line and configured to generate a startup signal with a startup-frequency during a startup period of the switching power converter. The operation signal generator is connected to the output circuit via a second connection line and configured to generate an operation signal with an operation-frequency during an operation period of the switching power converter. The transition signal generator is connected to the output circuit via a third connection line and configured to generate a transition signal with varied frequencies during a transition period between the startup period and the operation period.

Abstract: An RF power amplifier includes an amplifier device and a shunt-inductance circuit. The amplifier device includes a substrate, a combining node lead, first and second amplifier dies coupled to the substrate, and first and second output circuits. The first and second amplifier dies are configured to amplify first and second input RF signals, respectively, to produce first and second output RF signals at first and second output terminals, respectively. The first output circuit includes a first inductive path connecting the first output terminal to the lead. The second output circuit includes a second inductive path connecting the second output terminal to the lead. The lead is configured to combine the first and second output RF signals to produce a third output RF signal. The shunt-inductance circuit is coupled between the first output terminal and a ground reference.

Abstract: A malic acid and KMnO4-based combined and modified cow dung biogas residue hydrochar preparation method, comprising: mixing a cow dung biogas residue with malic acid, and performing ultrasonic treatment to obtain a malic acid modified cow dung biogas residue; performing a hydrothermal reaction with KMnO4 in a high-temperature high-pressure reactor to obtain a combined and modified cow dung biogas residue hydrochar material.

Abstract: The present disclosure discloses a control method and a control apparatus for brightness of display panel, a storage medium and a processor. The method comprises: acquiring a plurality of pixel values processed by an image processor, wherein the bit width of each of the plurality of pixel values is a first preset bit width; performing data type conversion on each pixel value to obtain a plurality of pixel values of a second preset bit width, wherein the second preset bit width is greater than the first preset bit width; sending the plurality of pixel values of the second preset bit width to a digital-to-analog conversion module to determine the voltage output value of each sub-pixel of a display panel, wherein the voltage output value has a first linear relationship with the screen brightness of the display panel; and adjusting the voltage output value to control the screen brightness of the display panel.

Abstract: It discloses a polyether polyols for preparing flexible polyurethane foam, and a preparation method and application thereof. The method comprises the following steps: (1) carrying out a reaction on phosphorus oxychloride, epichlorohydrin, a first acidic catalyst and an inert solvent in a first microchannel reactor to obtain a chloroalkoxy phosphorus compound; (2) carrying out a reaction on the chloroalkoxy phosphorus compound, glycidol, a second acidic catalyst and an inert solvent in a second microchannel reactor to obtain a hydroxy compound; (3) carrying out a ring-opening reaction on the hydroxy compound, epoxy vegetable oil, a basic catalyst and an inert solvent in a third microchannel reactor to obtain a vegetable oil polyol; and (4) carrying out an addition polymerization reaction on the vegetable oil polyol, propylene oxide and an inert solvent in a fourth microchannel reactor to obtain the polyether polyols for preparing flexible polyurethane foam.

Abstract: An RF power amplifier includes an amplifier device and a shunt-inductance circuit. The amplifier device includes a substrate, a combining node lead, first and second amplifier dies coupled to the substrate, and first and second output circuits. The first and second amplifier dies are configured to amplify first and second input RF signals, respectively, to produce first and second output RF signals at first and second output terminals, respectively. The first output circuit includes a first inductive path connecting the first output terminal to the lead. The second output circuit includes a second inductive path connecting the second output terminal to the lead. The lead is configured to combine the first and second output RF signals to produce a third output RF signal. The shunt-inductance circuit is coupled between the first output terminal and a ground reference.

Abstract: A frequency controller for operating a switching power converter is provided. The frequency controller includes an output circuit, an operation signal generator, and a transition signal generator. The output circuit is to connect to a switching power converter. The startup signal generator is connected to the output circuit via a first connection line and configured to generate a startup signal with a startup-frequency during a startup period of the switching power converter. The operation signal generator is connected to the output circuit via a second connection line and configured to generate an operation signal with an operation-frequency during an operation period of the switching power converter. The transition signal generator is connected to the output circuit via a third connection line and configured to generate a transition signal with varied frequencies during a transition period between the startup period and the operation period.

Abstract: A semiconductor device includes a transistor die having top and bottom die surfaces, an electrically conductive structure, and input and output pads formed at the top die surface. An isolation structure is interposed between the input and output pads of the transistor die. The isolation structure extends above the top die surface, is coupled to the conductive structure, and is connected to a common return path of the transistor die. The isolation structure may be formed from one or more bondwires and is configured to reduce mutual coupling between input and output interconnects of the semiconductor device.

Abstract: A semiconductor device includes a transistor die having top and bottom die surfaces, an electrically conductive structure, and input and output pads formed at the top die surface. An isolation structure is interposed between the input and output pads of the transistor die. The isolation structure extends above the top die surface, is coupled to the conductive structure, and is connected to a common return path of the transistor die. The isolation structure may be formed from one or more bondwires and is configured to reduce mutual coupling between input and output interconnects of the semiconductor device.

Abstract: A preparation method of a flexible polyurethane foam includes the following steps of: (1) subjecting an epoxidized vegetable oil, a benzoylformic acid, a basic catalyst, and an inert solvent to a ring-opening reaction in a first microchannel reactor of a microchannel reaction device to obtain a vegetable oil polyol; (2) subjecting the vegetable oil polyol obtained in the step (1), a propylene oxide and an inert solvent to an addition polymerization reaction in a second microchannel reactor of the microchannel reaction device to obtain a vegetable oil polyol for flexible polyurethane foam; and (3) using the vegetable oil polyol for flexible polyurethane foam obtained in the step (2) as the unique polyol, and subjecting the same and an isocyanate polyol to a foaming reaction to obtain the flexible polyurethane foam.

Abstract: A method of a polyurethane foam includes the following steps of: (1) simultaneously pumping a mixed solution prepared from hydrogen peroxide, an organic acid, a catalyst and a stabilizer and a vegetable oil into a first microstructured reactor of a micro-channel modular reaction device for reacting to obtain a reaction solution containing epoxidized vegetable oil; (2) simultaneously pumping the reaction solution containing the epoxidized vegetable oil obtained from the step (1) and a compound of formula III into a second microstructured reactor of the micro-channel modular reaction device for reaction to obtain a vegetable oil polyol; and (3) reacting the vegetable oil polyol prepared from the step (2) with a foam stabilizer, a cyclohexylamine, an isocyanate and a foaming agent cyclopentane for foaming so as to prepare a rigid polyurethane foam.

Abstract: Process for producing polyamide powders by precipitation The present invention relates to a process for producing polyamide powders and to the polyamide powders obtainable by this process. The present invention additionally relates to the use of the polyamide powder as sintering powder in selective laser sintering.

Abstract: A power transistor die includes a semiconductor die with input and output die sides, and a transistor integrally formed in the semiconductor die between the input die side and the output die side, where the transistor has an input and an output (e.g., a gate and a drain, respectively). The power transistor die also includes an input bondpad and a first output bondpad integrally formed in the semiconductor die between the input die side and the transistor. The input bondpad is electrically connected to the input of the transistor. A conductive structure directly electrically connects the output of the transistor to the first output bondpad. A second output bondpad, which also may be directly electrically connected to the transistor output, may be integrally formed in the semiconductor die between the transistor and the output die side.

Abstract: An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate includes common electrodes, multiple first common electrode lines and multiple second common electrode lines. The multiple first common electrode lines intersect with the multiple second common electrode lines to form grids. The multiple first common electrode lines are connected with the common electrodes through first via-holes and the multiple second common electrode lines are connected with the common electrodes through second via-holes.

Abstract: Embodiments provide resource adjustment method, apparatus, and system. Under the method characteristic information of a service flow can be received by a communications network. A transmission path of the service flow can be determined based on a correspondence between the characteristic information of the service flow and the transmission path of the service flow. The transmission path includes a start network function NF and an end NF through which the service flow passes, and a link between the start NF and the end NF. A resource adjustment policy can then be determined for the transmission path to adjust a resource required by the service flow. With this, statuses of all network resources used for performing a service are considered during resource adjustment.

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element (e.g., first wirebonds) connected between the transistor output terminal and a quasi RF cold point node, a second inductive element (e.g., second wirebonds) connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes an envelope resistor, an envelope inductor, and an envelope capacitor coupled in series between the quasi RF cold point node and the ground reference node.