Abstract: Quantum preprocessing methods, devices, storage medium are disclosed. An embodiment includes: acquiring element information of a first matrix A and a first vector b in a linear system Ax={right arrow over (b)}; constructing a new matrix M for linear system preprocessing; computing a second matrix A? and a second vector b? for constructing a quantum circuit, according to the new matrix M; and constructing, a first quantum circuit representing a quantum state evolution of a specific class of element in the second matrix A?, and a second quantum circuit representing a quantum state evolution of a specific class of element in the second vector b?, and executing a quantum state evolution operation respectively on the first quantum circuit and the second quantum circuit, to obtain an evolved quantum state of the first quantum circuit and an evolved quantum state of the second quantum circuit.

Abstract: Disclosed are a method, device, storage medium and electronic device for data reading, applied to a pre-constructed quantum random access memory (QRAM) architecture for accessing data, wherein the QRAM architecture is a binary tree structure and comprises the following nodes: N layers of subtree node and one layer of leaf node, the N being an address length; the method includes: determining an address represented by a quantum state distributedly stored in each layer of subtree node; and moving, according to the address, data stored in the leaf node to the upper layer of subtree node via a first preset quantum circuit, until data corresponding to the address is output at a subtree node at the root of the binary tree structure.

Abstract: A method of making a decorative enclosure including providing a display portion having a top opening, a front portion and a back portion. A screen is disposed over the top opening of the display portion. The screen slopes downwards from the back portion to the front portion of the display portion and includes a plurality of screen openings configured to allow passage of particles for the simulation of falling snow within the display portion.

Abstract: A snow lantern including a display portion having a top opening. A screen is disposed over the top opening of the display portion, and the screen includes a plurality of screen openings through which pass particles for the simulation of falling snow within the display portion.

Abstract: A snow lantern including a display portion having a top opening. A screen is disposed over the top opening of the display portion, and the screen includes a plurality of screen openings through which pass particles for the simulation of falling snow within the display portion.

Abstract: A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.

Abstract: A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.

Abstract: A heterojunction semiconductor device comprises a substrate; a second barrier layer is disposed on the second channel layer and a second channel is formed; a trench gate structure is disposed in the second barrier layer; the trench gate structure is embedded into the second barrier layer and is composed of a gate medium and a gate metal located in the gate medium; an isolation layer is disposed in the second channel layer and separates the second channel layer into an upper layer and a lower layer; a first barrier layer is disposed between the lower layer of the second channel layer and the first channel layer and a first channel is formed; a bottom of the metal drain is flush with a bottom of the first barrier layer; and a first metal source is disposed between the second metal source and the first channel layer.

Abstract: A heterojunction semiconductor device comprises a substrate; a second barrier layer is disposed on the second channel layer and a second channel is formed; a trench gate structure is disposed in the second barrier layer; the trench gate structure is embedded into the second barrier layer and is composed of a gate medium and a gate metal located in the gate medium; an isolation layer is disposed in the second channel layer and separates the second channel layer into an upper layer and a lower layer; a first barrier layer is disposed between the lower layer of the second channel layer and the first channel layer and a first channel is formed; a bottom of the metal drain is flush with a bottom of the first barrier layer; and a first metal source is disposed between the second metal source and the first channel layer.

Abstract: The present disclosure discloses an item transfer apparatus, system and method, and belongs to the field of data processing. The method includes: sending, by a terminal, an order instruction of a target item to an order management system, feeding back, by the order management system, order information of an order to the terminal, sending, by the terminal, a resource exchange instruction to a card management system according to the order information and a read e-card, completing, by the card management system, transfer of the exchange resource, sending, by the order management system, an item transfer instruction to an item provider device according to a resource transfer result, and completing, by the item provider device, transfer of the target item.

Abstract: A wireless network access method and apparatus are provided. The method includes obtaining identification information and status information of one or more network access points, determining a target access point according to the status information, submitting the identification information of the target access point to a network access server via a mobile communications network, receiving access account information for the target access point from the network access server, and transmitting a wireless network access request including the received access account information, to the target access point.

Abstract: The present invention discloses an improved method of combination test by using argon as gross-leak tracer gas and using helium as fine-leak tracer gas, belongs to the field of hermeticity test. The method is designed to solve the problem that the existing methods are not ideal when the component has lower ?Hemin and wider range of volume V. The invention comprises step S1 of selecting: using helium-argon prefilling method for the first hermeticity test and helium-argon pressuring method after helium-argon prefilling for repetitive hermeticity test, or using helium-argon pressuring method after argon prefilling for the first hermeticity test and helium-argon multi-pressuring method after argon prefilling for repetitive hermeticity tests. The improved method extends the maximum detection-waiting time, effectively prevents detection missing and misjudges in gross-leak/fine-leak test, and solves the detection problems on applicability, feasibility and credibility.

Abstract: A wireless network access method and apparatus are provided. The method includes obtaining identification information and status information of one or more network access points, determining a target access point according to the status information, submitting the identification information of the target access point to a network access server via a mobile communications network, receiving access account information for the target access point from the network access server, and transmitting a wireless network access request including the received access account information, to the target access point.

Abstract: A method for helium mass spectrometric fine-leak test is based on quantitative determination of maximum test-waiting time, which gives a method for quantitative determination of the maximum test-waiting time for fine-leak test during a helium mass spectrometric test process of the sealability, and gives a method for determining the criterion for measured leak rate by taking the minimum helium gas exchange time constant, i.e., a rigour grade ?Hemin, of an acceptable sealed electronic component as a basic criterion for helium mass spectrometric fine-leak test. Based on the inventive method for quantitative determination of the maximum test-waiting time, for most of the cavity volume ranges, the maximum test-waiting time that is determined accurately may be much longer than 1 hour or 0.5 hour as determined qualitatively by the existing related standards.

Abstract: The present invention discloses a method of cumulative helium mass spectrometric combination test by using argon gas as gross-leak tracer gas, and specifically gives the procedure for this gross-leak and fine-leak combination test, comprising steps and methods of selecting helium-argon prefilling method or helium-argon pressuring method, fixed or flexible scheme and the criterion RAr0max for argon measured leak rate of gross-leak test according to the rigour grade THemin, cavity volume, leak rate of surficially absorbed helium and argon and the history of the test of a component under test; designing time for pressuring of helium-argon pressuring method, the maximum test-waiting time of fine-leak test and the criterion for helium measured leak rate, helium-argon prefilling and helium-argon pressuring, removing absorbed helium and argon gas, gross-leak test, fine-leak test and complementally testing bigger gross leak, which enhances the sensitivity of gross-leak test, lengthens the maximum test-waiting time of

Abstract: The present disclosure discloses an item transfer apparatus, system and method, and belongs to the field of data processing. The method includes: sending, by a terminal, an order instruction of a target item to an order management system, feeding back, by the order management system, order information of an order to the terminal, sending, by the terminal, a resource exchange instruction to a card management system according to the order information and a read e-card, completing, by the card management system, transfer of the exchange resource, sending, by the order management system, an item transfer instruction to an item provider device according to a resource transfer result, and completing, by the item provider device, transfer of the target item.

Abstract: The present invention discloses an improved method of combination test by using argon as gross-leak tracer gas and using helium as fine-leak tracer gas, belongs to the field of hermeticity test. The method is designed to solve the problem that the existing methods are not ideal when the component has lower ?Hemin and wider range of volume V. The invention comprises step S1 of selecting: using helium-argon prefilling method for the first hermeticity test and helium-argon pressuring method after helium-argon prefilling for repetitive hermeticity test, or using helium-argon pressuring method after argon prefilling for the first hermeticity test and helium-argon multi-pressuring method after argon prefilling for repetitive hermeticity tests. The improved method extends the maximum detection-waiting time, effectively prevents detection missing and misjudges in gross-leak/fine-leak test, and solves the detection problems on applicability, feasibility and credibility.

Abstract: The present invention discloses a method of cumulative helium mass spectrometric combination test by using argon gas as gross-leak tracer gas, and specifically gives the procedure for this gross-leak and fine-leak combination test, comprising steps and methods of selecting helium-argon prefilling method or helium-argon pressuring method, fixed or flexible scheme and the criterion RAr0max for argon measured leak rate of gross-leak test according to the rigour grade THemin, cavity volume, leak rate of surficially absorbed helium and argon and the history of the test of a component under test; designing time for pressuring of helium-argon pressuring method, the maximum test-waiting time of fine-leak test and the criterion for helium measured leak rate, helium-argon prefilling and helium-argon pressuring, removing absorbed helium and argon gas, gross-leak test, fine-leak test and complementally testing bigger gross leak, which enhances the sensitivity of gross-leak test, lengthens the maximum test-waiting time of

Abstract: A method for helium mass spectrometric fine-leak test is based on quantitative determination of maximum test-waiting time, which gives a method for quantitative determination of the maximum test-waiting time for fine-leak test during a helium mass spectrometric test process of the sealability, and gives a method for determining the criterion for measured leak rate by taking the minimum helium gas exchange time constant, i.e., a rigour grade ?Hemin, of an acceptable sealed electronic component as a basic criterion for helium mass spectrometric fine-leak test. Based on the inventive method for quantitative determination of the maximum test-waiting time, for most of the cavity volume ranges, the maximum test-waiting time that is determined accurately may be much longer than 1 hour or 0.5 hour as determined qualitatively by the existing related standards.