Abstract: A light-emitting diode includes a semiconductor epitaxial structure and an electrode structure. The electrode structure includes an ohmic contact layered unit disposed on the semiconductor epitaxial structure, and a wire bonding layered unit disposed on the ohmic contact layered unit. The wire bonding layered unit includes at least one stress buffer portion and a pad portion disposed on the at least one stress buffer portion. The stress buffer portion includes at least two stress buffer layers and an electrode metal layer disposed therebetween. Each of the stress buffer layers has a hardness greater than that of the pad portion. A light-emitting device is also disclosed.