Abstract: Improved radio frequency gain in a silicon-based bipolar transistor may be provided by adoption of a common-base configuration, preferably together with excess doping of the base to provide extremely low base resistances boosting performance over similar common-emitter designs.

Abstract: A high-power solid-state transistor structure comprised of a plurality of emitter or gate fingers arranged in a uniform or non-uniform manner to provide improved high power performance is disclosed. Each of the fingers is associated with a corresponding one of a plurality of sub-cells. In an exemplary embodiment, the fingers may be arranged in a 1-D or 2-D form having a “hollow-center” layout where one or more elongated emitter fingers or subcells are left out during design or disconnected during manufacture. In another exemplary embodiment, the fingers may be arranged in a 1-D or 2-D form having one or more “arc-shaped” rows that includes one or more elongated emitter fingers or subcells. The structure can be practically implemented and the absolute thermal stability can be maintained for very high power transistors with reduced adverse effects due to random variation in the manufacturing and design process.

Abstract: Improved radio frequency gain in a silicon-based bipolar transistor may be provided by adoption of a common-base configuration, preferably together with excess doping of the base to provide extremely low base resistances boosting performance over similar common-emitter designs.

Abstract: A high-power solid-state transistor structure comprised of a plurality of emitter or gate fingers arranged in a uniform or non-uniform manner to provide improved high power performance is disclosed. Each of the fingers is associated with a corresponding one of a plurality of sub-cells. In an exemplary embodiment, the fingers may be arranged in a 1-D or 2-D form having a “hollow-center” layout where one or more elongated emitter fingers or subcells are left out during design or disconnected during manufacture. In another exemplary embodiment, the fingers may be arranged in a 1-D or 2-D form having one or more “arc-shaped” rows that includes one or more elongated emitter fingers or subcells. The structure can be practically implemented and the absolute thermal stability can be maintained for very high power transistors with reduced adverse effects due to random variation in the manufacturing and design process.

Abstract: A high-power solid-state transistor structure comprised of a plurality of emitter or gate fingers in a uniform or non-uniform manner to provide improved high power performance is disclosed. Preferably, each of the fingers is associated with a corresponding one of a plurality of sub-cells, the sub-cells being arranged in at least one row. The advantage of the invention is that the structure can be practically implemented and the absolute thermal stability can be maintained for very high power transistors with reduced adverse effects resulting from random variation in the manufacturing and design process.