Abstract: A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

Abstract: A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

Abstract: In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method may further include detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material, adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material, and directing a second ion beam to the substrate through the extraction plate using the second set of control settings.

Abstract: A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.

Abstract: In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an extraction plate of a processing apparatus using a first set of control settings of the processing apparatus. The method may further include detecting a signal from the substrate that indicates a change in material being etched by the first ion beam from a first material to a second material, adjusting control settings of the processing apparatus to a second set of control settings different from the first set of control settings based on the second material, and directing a second ion beam to the substrate through the extraction plate using the second set of control settings.

Abstract: A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.