Patents by Inventor Nipun Misra

Nipun Misra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240119460
    Abstract: Systems, methods, and computer program products may store, in a distributed cache, a rule associated with a plurality of accounts in a Real-Time Payments (RTP) network, the rule being stored in association with account data associated with the plurality of accounts; receive an account level exclusion directive associated with the account; store, in the distributed cache, the account level exclusion directive in association with the account; receive transaction data associated with a transaction in the RTP network between the account and another account; retrieve, from the distributed cache, the rule, the account level exclusion directive, and the account data associated with the account; exclude, based on the account level exclusion directive, use of the rule for processing the transaction; and process, without applying the rule, the transaction in the RTP network.
    Type: Application
    Filed: December 20, 2023
    Publication date: April 11, 2024
    Inventors: Navendu Misra, Kavish Agarwal, Nipun Agarwal, Juharasha Shaik, Praveen Kumar Suresh Guggarigoudar, Ravi Rameshbhai Alagiya, Rajiv Ranjan, Durga S. Kala, Andrey Masharov, Xuepeng Li, Anuvind Pushpak, Marc Corbalan Vila, Stuart Mark Williams
  • Patent number: 11935724
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: March 19, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Publication number: 20230197406
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 22, 2023
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 11587766
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Publication number: 20210313147
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Application
    Filed: June 21, 2021
    Publication date: October 7, 2021
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 11043361
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: June 22, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Publication number: 20180053630
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Application
    Filed: October 25, 2017
    Publication date: February 22, 2018
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhijang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 9824862
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: November 21, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 9721760
    Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.
    Type: Grant
    Filed: June 7, 2013
    Date of Patent: August 1, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Kartik Ramaswamy, Nipun Misra, Gonzalo Antonio Monroy, James D. Carducci, Steven Lane
  • Patent number: 9653267
    Abstract: A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.
    Type: Grant
    Filed: October 1, 2012
    Date of Patent: May 16, 2017
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Kallol Bera, Nipun Misra, Larry D. Elizaga
  • Patent number: 9443700
    Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: September 13, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, Kartik Ramaswamy, James D. Carducci, Steven Lane
  • Patent number: 9269546
    Abstract: Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: February 23, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ming-Feng Wu, Ajit Balakrishna, Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra
  • Patent number: 9129777
    Abstract: A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: September 8, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, James D. Carducci, Gary Leray, Kartik Ramaswamy
  • Publication number: 20150075719
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Application
    Filed: November 20, 2014
    Publication date: March 19, 2015
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 8951384
    Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: February 10, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, James D. Carducci, Gary Leray, Kartik Ramaswamy
  • Patent number: 8920597
    Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: December 30, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Publication number: 20140338835
    Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.
    Type: Application
    Filed: June 7, 2013
    Publication date: November 20, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Kartik Ramaswamy, Nipun Misra, Gonzalo Antonio Monroy, James D. Carducci, Steven Lane
  • Publication number: 20140265855
    Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution.
    Type: Application
    Filed: February 10, 2014
    Publication date: September 18, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, Kartik Ramaswamy, James D. Carducci, Steven Lane
  • Patent number: 8734664
    Abstract: A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.
    Type: Grant
    Filed: August 5, 2013
    Date of Patent: May 27, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Yang Yang, Kartik Ramaswamy, Kenneth S. Collins, Steven Lane, Douglas A. Buchberger, Jr., Lawrence Wong, Nipun Misra
  • Publication number: 20140069584
    Abstract: A plasma reactor includes an RF-driven ceiling electrode overlying a process zone and two (or more) counter electrodes underlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.
    Type: Application
    Filed: August 5, 2013
    Publication date: March 13, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Yang Yang, Kartik Ramaswamy, Kenneth S. Collins, Steven Lane, Douglas A. Buchberger, JR., Lawrence Wong, Nipun Misra