Abstract: A computerized method for estimating a size of a nanometric part of an inspected article, the method including: (a) acquiring inspection results generated by processing an inspection image which was generated by collecting signals arriving from a portion of the article which includes the part by an inspection system; (b) fitting to the inspection results an approximation function from a group of functions which is related to a response pattern of the inspection system; and (c) determining an estimated size of the part, based on at least one parameter of the approximation function.

Abstract: A system configured to detect defects in an inspection image generated by collecting signals arriving from an article, the system comprising a tangible processor which includes: (i) a distribution acquisition module, configured to acquire a distribution of comparison values, each of the comparison values being indicative of a relationship between a value associated with a pixel of the inspection image and a corresponding reference value; (ii) a fitting module, configured to fit to the distribution an approximation function out of a predefined group of functions; and (iii) a defect detection module, configured to: (a) set a defect detection criterion based on a result of the fitting; and to (b) determine a presence of a defect in the inspection image, based on the defect detection criterion.

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.

Abstract: A system for coupling a mask to a mask holder. The system includes a base, an aperture; mask holder cover supporting elements arranged to move between a first position and a third position while supporting the mask holder cover; mask supporting elements arranged to move between a fourth position and a sixth position while supporting the mask; mask holder base supporting elements arranged to support the mask holder base. When the mask holder cover supporting elements are at the first position and the mask supporting elements are at the third position the mask holder cover, the mask and the base are spaced apart from each other. When the mask holder cover supporting elements are at the third position and the mask supporting elements are at the sixth position the mask holder cover, the mask and the base are connected to each other.

Abstract: A system for generating calibration information usable for wafer inspection, the system including: (I) a displacement analysis module, configured to: (a) calculate a displacement for each target out of multiple targets selected in multiple scanned frames which are included in a scanned area of the wafer, the calculating based on a correlation of: (i) an image associated with the respective target which was obtained during a scanning of the wafer, and (ii) design data corresponding to the image; and (b) determining a displacement for each of the multiple scanned frames, the determining based on the displacements calculated for multiple targets in the respective scanned frame; and (II) a subsequent processing module, configured to generate calibration information including the displacements determined for the multiple scanned frames, and a target database that includes target image and location information of each target of a group of database targets.

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.

Abstract: A system for coupling a mask to a mask holder. The system includes a base, an aperture; mask holder cover supporting elements arranged to move between a first position and a third position while supporting the mask holder cover; mask supporting elements arranged to move between a fourth position and a sixth position while supporting the mask; mask holder base supporting elements arranged to support the mask holder base. When the mask holder cover supporting elements are at the first position and the mask supporting elements are at the third position the mask holder cover, the mask and the base are spaced apart from each other. When the mask holder cover supporting elements are at the third position and the mask supporting elements are at the sixth position the mask holder cover, the mask and the base are connected to each other.

Abstract: A system for location based wafer analysis, the system comprising: (i) a first input interface; (ii) a second input interface; (iii) a correlator; and (iv) a processor, configured to generate inspection results for the inspected wafer, with the help of at least one frame run-time displacement.

Abstract: A system capable of inspecting an article for defects, the system including: a patch comparator, configured to determine with respect to each of a plurality of reference patches in a reference image a similarity level, based on a predefined patch-similarity criterion and on a source patch defined in the reference image; an evaluation module, configured to rate each inspected pixel out of multiple inspected pixels of the inspection image with a representative score which is based on the similarity level of a reference patch associated with a reference pixel corresponding to the inspected pixel; a selection module, configured to select multiple selected inspected pixels based on the representative scores of the multiple inspected pixels; and a defect detection module, configured to determine a presence of a defect in the candidate pixel based on an inspected value of the candidate pixel and inspected values of the selected inspected pixels.

Abstract: A system configured to detect defects in an inspection image generated by collecting signals arriving from an article, the system comprising a tangible processor which includes: (i) a distribution acquisition module, configured to acquire a distribution of comparison values, each of the comparison values being indicative of a relationship between a value associated with a pixel of the inspection image and a corresponding reference value; (ii) a fitting module, configured to fit to the distribution an approximation function out of a predefined group of functions; and (iii) a defect detection module, configured to: (a) set a defect detection criterion based on a result of the fitting; and to (b) determine a presence of a defect in the inspection image, based on the defect detection criterion.

Abstract: A system includes a memory and a processor device operatively coupled to the memory to obtain an inspected noise-indicative value representative of an analyzed pixel of an inspected image of an inspected object, and a reference noise-indicative value representative for each of multiple reference pixels of the inspected image. The processor device computes a representative noise-indicative value based on the inspected noise-indicative value and multiple reference noise-indicative values, calculates a defect-indicative value based on an inspected value representative of the analyzed pixel and determines a presence of a defect in the analyzed pixel based on the representative noise-indicative value and the defect-indicative value.

Abstract: A system including an interface for receiving inspection image data of an inspection image of an inspection object. The inspection image data includes information of an analyzed pixel of the inspected image and of reference pixels of the inspected image. The system further includes a memory and a processor device operatively coupled to the interface and the memory to obtain an inspected value representative of the analyzed pixel of the inspected image, and a reference value for each of the reference pixels of the inspected image. For each reference pixel, the processor devices calculates a difference between the reference value of a respective reference pixel and the inspected value of the analyzed pixel, computes a representative difference value based on the differences and determines a presence of a defect in the analyzed pixel based on the representative difference value.

Abstract: A defect detection system for computerized detection of defects, the system including: an interface for receiving inspection image data including information of an analyzed pixel and of a plurality of reference pixels; and a processor, including: a differences analysis module, configured to: (a) calculate differences based on an inspected value representative of the analyzed pixel and on multiple reference values, each of which is representative of a reference pixel among the plurality of reference pixels; wherein the differences analysis module is configured to calculate for each of the reference pixels a difference between the reference value of the reference pixel and the inspected value; and (b) compute a representative difference value based on a plurality of the differences; and a defect analysis module, configured to determine a presence of a defect in the analyzed pixel based on the representative difference value.

Abstract: A defect detection system for computerized detection of defects in an inspected object based on processing of an inspection image generated by collecting signals arriving from the inspected object, the system including: an interface for obtaining an inspected noise-indicative value and multiple reference noise-indicative values, the inspected noise-indicative value representative of an analyzed pixel and each of the reference noise-indicative values representative of a reference pixel among a plurality of reference pixels; and a processor, including: a noise analysis module, configured to compute a representative noise-indicative value based on a plurality of noise-indicative values which includes the inspected noise-indicative value and the multiple reference noise-indicative values; and a defect analysis module, configured to calculate a defect-indicative value based on an inspected value representative of the analyzed pixel, and to determine a presence of a defect in the analyzed pixel based on the represe

Abstract: A system for location based wafer analysis, the system comprising: (i) a first input interface; (ii) a second input interface; (iii) a correlator; and (iv) a processor, configured to generate inspection results for the inspected wafer, with the help of at least one frame run-time displacement.

Abstract: A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask

Abstract: A system for location based wafer analysis, the system comprising: (i) a first input interface; (ii) a second input interface; (iii) a correlator; and (iv) a processor, configured to generate inspection results for the inspected wafer, with the help of at least one frame run-time displacement.

Abstract: A coupling module may include an upper portion that defines an aperture, mask contact elements, chuck contact elements and an intermediate element that is connected between the mask contact elements and the upper portion. A shape and a size of the aperture may correspond to a shape and size of a pattern transfer area of an extreme ultra violet (EUVL) mask. The coupling module may be shaped and sized so that once the mask contact elements contact the upper portion of the EUVL mask, the chuck contact elements contact a chuck that supports the mask. The coupling module may further provide at least one conductive path between the upper portion of the EUVL mask and the chuck when the EUVL mask is positioned on the chuck.

Abstract: A system for generating calibration information usable for wafer inspection, the system including: (I) a displacement analysis module, configured to: (a) calculate a displacement for each target out of multiple targets selected in multiple scanned frames which are included in a scanned area of the wafer, the calculating based on a correlation of: (i) an image associated with the respective target which was obtained during a scanning of the wafer, and (ii) design data corresponding to the image; and (b) determining a displacement for each of the multiple scanned frames, the determining based on the displacements calculated for multiple targets in the respective scanned frame; and (II) a subsequent processing module, configured to generate calibration information including the displacements determined for the multiple scanned frames, and a target database that includes target image and location information of each target of a group of database targets.