Patents by Inventor Nirmaya Maity

Nirmaya Maity has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ruthenium layer formation for copper film deposition
    Patent number: 7910165
    Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The invention generally provides a method of forming a film on a substrate surface including positioning a substrate within a process chamber, exposing a ruthenium-containing compound to the substrate surface, purging the process chamber with a purge gas, reducing the ruthenium-containing compound with a reductant to form a ruthenium layer on the substrate surface and purging the process chamber with the purge gas. The ruthenium-containing compound is selected from the group consisting of bis(dialkylpentadienyl)ruthenium compounds, bis(alkylpentadienyl) ruthenium compounds, bis(pentadienyl)ruthenium compounds, and combinations thereof.
    Type: Grant
    Filed: March 26, 2004
    Date of Patent: March 22, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Seshadri Ganguli, Kavita Shah, Nirmaya Maity, Mei Chang
  • Ruthenium layer formation for copper film deposition
    Publication number: 20040241321
    Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The invention generally provides a method of forming a film on a substrate surface including positioning a substrate within a process chamber, exposing a ruthenium-containing compound to the substrate surface, purging the process chamber with a purge gas, reducing the ruthenium-containing compound with a reductant to form a ruthenium layer on the substrate surface and purging the process chamber with the purge gas. The ruthenium-containing compound is selected from the group consisting of bis(dialkylpentadienyl)ruthenium compounds, bis(alkylpentadienyl) ruthenium compounds, bis(pentadienyl)ruthenium compounds, and combinations thereof.
    Type: Application
    Filed: March 26, 2004
    Publication date: December 2, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Seshadri Ganguli, Kavita Shah, Nirmaya Maity, Mei Chang