Patents by Inventor Nirut Pingate

Nirut Pingate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7838442
    Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: November 23, 2010
    Assignee: National Science and Technology Development Agency
    Inventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
  • Patent number: 7671271
    Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.
    Type: Grant
    Filed: July 5, 2006
    Date of Patent: March 2, 2010
    Assignee: National Science and Technology Dev. Agency
    Inventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
  • Publication number: 20090117685
    Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.
    Type: Application
    Filed: October 8, 2008
    Publication date: May 7, 2009
    Applicant: NATIONAL SCIENCE AND TECHNOLOGY DEVELOPMENT AGENCY
    Inventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
  • Publication number: 20070209699
    Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.
    Type: Application
    Filed: July 5, 2006
    Publication date: September 13, 2007
    Inventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
  • Publication number: 20070137574
    Abstract: A solar cell manufacturing machine is configured to connect with a VHF frequency generator. The machine is used for coating an amorphous silicon film and a microcrystalline silicon film on a substrate vertically, and comprises a vacuum chamber, a box carrier positioned in the vacuum chamber, at least one hole shaped plate electrode vertically positioned in the box carrier, and a plurality of ground plates vertically positioned in the box carrier adjacent to the plate electrode. The plate electrode has defined thereon a plurality of holes formed to spread electromagnetic energy inputted into the plate electrode from the VHF frequency generator. The plate electrode and the plurality of ground plates are configured to form an electric field therebetween so as to coat at least one of an amorphous silicon film and a microcrystalline film on at least one substrate positioned between the plate electrode and the ground plates.
    Type: Application
    Filed: December 21, 2006
    Publication date: June 21, 2007
    Inventors: Porponth Sichanugrist, Nirut Pingate, Jaran Sritharathikun, Peerawut Chinworarangsri, Patipan Krudtad, Somlak Khunraksa