Abstract: Integrated circuit structures having backside power delivery for multi-height standard cell circuits are described. In an example, an integrated circuit structure includes a front-side structure including a device layer including a first cell separated from a second cell by a cell boundary, and a metallization layer immediately above the device layer. A track of the metallization layer is along the cell boundary from a plan view perspective. A backside structure is below the device layer. The backside structure provides power to the device layer.

Abstract: Integrated circuit structures having backside power staple are described. In an example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts is extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A front-side metal routing layer is extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts. A backside metal routing layer is extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer. A conductive feedthrough structure couples the backside metal routing layer to the front-side metal routing layer.