Abstract: The execution of a software application is diverted to detect software object corruption in the software application. Software objects used by the software application are identified and their pointers are inspected. One or more tests are applied to pointers pointing to the virtual method tables of the software objects, addresses (or pointers) in the virtual method tables, and memory attributes or content of the memory buffer identified by the addresses for inconsistencies that indicate corruption. A determination of whether the software objects are corrupted is made based on the outcome of the tests. If software object corruption is detected, proper corrective actions are applied to prevent malicious exploitation of the corruption.

Abstract: A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.

Abstract: Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.

Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.

Abstract: An approach is described for maintaining multiple presence objects associated with a single entity. The different presence objects correspond to different respective aspects of the entity's presence. Each presence object includes subscriber information and permission information associated therewith. The subscriber information identifies the subscribers that subscribe to receive notifications for a particular presence object. The permission information identifies the users who are entitled to receive notifications for the particular presence object. By virtue of the use of multiple objects, the entity can control access to its presence information with a high degree of granularity.

Abstract: An apparatus and process operate to impose sonic pressure upon a spin-on film liquid mass that exhibits a liquid topography and in a solvent vapor overpressure to alter the liquid topography. Other apparatus and processes are disclosed.

Abstract: Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.

Abstract: The present invention provides a computer implemented method and apparatus to revising logical unit ownership in a host. A host receives an error message from a storage subsystem having at least two storage controllers and at least one logical unit coupled to at least one of the storage controllers. The host suspends I/O from the host to the storage subsystem. The host transmits a verification of logical unit ownership query to the storage subsystem. The host determines that ownership between a host and a logical unit on the at least one of the storage controllers has changed from a mapping table of the host. Responsive to a determination that ownership has changed, the host updates ownership in a mapping table of the host to reflect the ownership between the host and the logical unit. The host resumes I/O from the host to the storage subsystem, wherein the host routinely exchanges I/O with the storage subsystem.

Abstract: A method of determining a need to perform regeneration of a diesel particulate filter in a diesel engine exhaust predicts a soot load of a diesel particulate filter with a pressure change based soot load estimate based upon a pressure change across the diesel particulate filter at a first time and a second time. A restriction sensitivity for the diesel particulate filter is calculated based upon the pressure change across the diesel particulate filter at the first time and the second time. The method transitions from the pressure change based soot load estimate to a model based soot accumulation estimate of the soot load of the diesel particulate filter upon the restriction sensitivity falling below a predetermined threshold. Regeneration of the diesel particulate filter is requested after the estimated soot level reaches a preset level based upon the soot accumulation model.

Abstract: A network management device sends an SNMP multi-cast GET on a network to discover all the network devices on the network or subnet. The network management device builds a Management Information Base (MIB) based on the responses received from the SNMP multi-cast GET. The MIB information is then sent to a Network Management System (NMS). The SNMP multi-cast GET can be sent based on a command to discover network devices on the network or can be sent based on a polling algorithm. The system and method also include the ability to send an SNMP multi-cast SET to set the same parameter(s) on all the devices on the network/subnet.

Abstract: Selective deposition of metal over dielectric layers in a manner that minimizes of eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured as allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.

Abstract: The described implementations relate to analysis of computing programs. One implementation provides a technique that can include accessing values of input variables that are processed by test code and runtime values that are produced by the test code while processing the input variables. The technique can also include modeling relationships between the runtime values and the values of the input variables. The relationships can reflect discontinuous functions of the input variables.

Abstract: A tag recommendation for an item to be tagged is generated by: selecting a set of candidate neighboring items in an electronic social network based on context of items in the electronic social network respective to an owner of the item to be tagged; selecting a set of nearest neighboring items from the set of candidate neighboring items based on distances of the candidate neighboring items from the item to be tagged as measured by an item comparison metric; and selecting at least one tag recommendation based on tags of the items of the set of nearest neighboring items. The item comparison metric may comprise a Mahalanobis distance metric trained on the set of candidate neighboring items to correlate the trained Mahalanobis distance between pairs of items of the set of candidate neighboring items with an overlap metric indicative of overlap of the tag sets of the two items.

Abstract: Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.

Abstract: Methods of forming semiconductor devices that include one or more arrays of memory devices in a three-dimensional arrangement, such as those that include forming a conductive contact in a dielectric material overlying a memory array, wherein a wafer bonding and cleaving process may be utilized to provide a foundation material for forming another memory array having an active region in electrical contact with the conductive contact. Additionally, the conductive contact may be formed in a donor wafer, which in turn may be bonded to a dielectric material overlying a memory array using another wafer bonding process. Novel semiconductor devices and structures including the same may be formed using such methods, for example.

Abstract: An alternating current electrospray mass spectrometry device includes an electrospray device having at least one emitter providing a passageway for transmission of an analyte sample. At least one conductive element is in electrical communication with the at least one emitter. A power source generates an alternating current electric field to form a liquid cone at a tip of the emitter and ionizes the analyte sample present in the liquid cone. The frequency of the electric field entrains low mobility ions in the liquid cone. The AC electric field causes the emitter to discharge the liquid cone as a liquid aerosol drop, and a mass spectrometry device analyzes the ionized analyte sample to determine the composition of the contained analyte sample.

Abstract: Electroless plating can be utilized to form electrical interconnects associated with semiconductor substrates. For instance, a semiconductor substrate can be formed to have a dummy structure thereover with a surface suitable for electroless plating, and to also have a digit line thereover having about the same height as the dummy structure. A layer can be formed over the dummy structure and digit line, and openings can be formed through the layer to the upper surfaces of the dummy structure and digit line. Subsequently, a conductive material can be electroless plated within the openings to form electrical contacts within the openings. The opening extending to the dummy structure can pass through a capacitor electrode, and accordingly the conductive material formed within such opening can be utilized to form electrical contact to the capacitor electrode.

Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.

Abstract: A system includes a fuel nozzle. The fuel nozzle includes a hub having an axis, a shroud disposed about the hub, an airflow path between the hub and the shroud, multiple vanes extending between the hub and the shroud, and a first fuel path leading to multiple first fuel outlets disposed on the multiple vanes. The fuel nozzle also includes a second fuel path leading to multiple second fuel outlets disposed on at least one of the hub and/or the shroud, wherein the multiple second fuel outlets are disposed at an axial distance upstream from a downstream end of the hub.

Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.