Patents by Inventor Nishanth Manjunath

Nishanth Manjunath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
    Patent number: 11286560
    Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: March 29, 2022
    Assignee: Lam Research Corporation
    Inventors: Richard Phillips, Chloe Baldasseroni, Nishanth Manjunath
  • THICKNESS COMPENSATION BY MODULATION OF NUMBER OF DEPOSITION CYCLES AS A FUNCTION OF CHAMBER ACCUMULATION FOR WAFER TO WAFER FILM THICKNESS MATCHING
    Publication number: 20200299838
    Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.
    Type: Application
    Filed: June 2, 2020
    Publication date: September 24, 2020
    Inventors: Richard Phillips, Chloe Baldasseroni, Nishanth Manjunath
  • Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
    Patent number: 10697059
    Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: June 30, 2020
    Assignee: Lam Research Corporation
    Inventors: Richard Phillips, Chloe Baldasseroni, Nishanth Manjunath
  • THICKNESS COMPENSATION BY MODULATION OF NUMBER OF DEPOSITION CYCLES AS A FUNCTION OF CHAMBER ACCUMULATION FOR WAFER TO WAFER FILM THICKNESS MATCHING
    Publication number: 20190085448
    Abstract: Methods and apparatuses for performing atomic layer deposition are provided. A method may include determining an amount of accumulated deposition material currently on an interior region of a deposition chamber interior, wherein the amount of accumulated deposition material changes over the course of processing a batch of substrates; applying the determined amount of accumulated deposition material to a relationship between a number of ALD cycles required to achieve a target deposition thickness, and a variable representing an amount of accumulated deposition material, wherein the applying returns a compensated number of ALD cycles for producing the target deposition thickness given the amount of accumulated deposition material currently on the interior region of the deposition chamber interior; and performing the compensated number of ALD cycles on one or more substrates in the batch.
    Type: Application
    Filed: October 16, 2017
    Publication date: March 21, 2019
    Inventors: Richard Phillips, Chloe Baldasseroni, Nishanth Manjunath