Patents by Inventor Nithin Devarajulu Palavalli

Nithin Devarajulu Palavalli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and fabrication method thereof
    Patent number: 8252652
    Abstract: A semiconductor structure is provided. A second conductivity type well region is formed on a first conductivity type substrate. A second conductivity type diffused source and second conductivity type diffused drain are formed on the first conductivity type substrate. A gate structure is formed on the second conductivity type well region between the second conductivity type diffused source and the second conductivity type diffused drain. First conductivity type buried rings are arranged in a horizontal direction, and formed in the second conductivity type well region, and divide the second conductivity type well region into an upper drift region and a lower drift region.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: August 28, 2012
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Yih-Jau Chang, Shang-Hui Tu, Gene Sheu, Yi-Fong Chang, Nithin Devarajulu Palavalli
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20110233672
    Abstract: A semiconductor structure is provided. A second conductivity type well region is formed on a first conductivity type substrate. A second conductivity type diffused source and second conductivity type diffused drain are formed on the first conductivity type substrate. A gate structure is formed on the second conductivity type well region between the second conductivity type diffused source and the second conductivity type diffused drain. First conductivity type buried rings are arranged in a horizontal direction, and formed in the second conductivity type well region, and divide the second conductivity type well region into an upper drift region and a lower drift region.
    Type: Application
    Filed: March 29, 2010
    Publication date: September 29, 2011
    Inventors: Yih-Jau CHANG, Shang-Hui Tu, Gene Sheu, Yi-Fong Chang, Nithin Devarajulu Palavalli