Abstract: The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.

Abstract: The present invention provides a method for in-situ etching of a wafer prior to physical vapor deposition, the method comprising the following steps. A sputtering chamber is provided, the sputtering chamber being collectively defined by a wafer handling apparatus and a magnetron. The wafer is placed into the sputtering chamber. A gas is introduced into the sputtering chamber such that the gas is separated into a plasma, wherein the plasma includes gas ions. A first negative potential is applied to the wafer using a wafer chuck of the wafer handling apparatus while a second negative potential is simultaneously applied to a sputtering target of the magnetron, wherein simultaneous application of the first negative potential to the wafer and the second negative potential to the sputtering target causes gas ions to eject material from the wafer and the sputtering target of the magnetron such that ejected material from the wafer and the sputtering target is collected onto a shield defined by the sputtering chamber.

Abstract: The present invention provides a method for depositing an ultra-thin film onto a wafer. The method comprising the following steps. A sputtering chamber is provided wherein the sputtering chamber is collectively defined by a wafer handling apparatus and a magnetron. The wafer is placed onto a wafer chuck of the wafer handling apparatus. The wafer chuck is moved to a first distance to the magnetron. A gas is introduced into the sputtering chamber such that the gas is separated into a plasma, wherein the plasma includes gas ions. A first negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the first distance to the magnetron. The wafer chuck is moved to a second distance to the magnetron. A second negative potential is applied to at least one sputtering target of the magnetron while the wafer chuck with the wafer is at the second distance to the magnetron.

Abstract: The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.

Abstract: The present invention provides a magnetron system comprising a baseplate assembly that defines a housing portion and a power feedthrough. A magnet assembly and a segmented target assembly are disposed within the housing portion. The segmented target assembly has an inner target segment having a plurality of target tiles. A plurality of electrical contacts are in electrical communication with the power feedthrough, wherein each electrical contact of the plurality of electrical contacts electrically contacts a respective target tile of the plurality of target tiles such that power is delivered from each electrical contact of the plurality of electrical contacts to each respective target tile of the plurality of target tiles.

Abstract: A method for the fabrication of h-WO3/WS2 core/shell nanowires and their use in flexible supercapacitor applications. The novel nanowire assemblies exhibit multifold advantages desired for high-performance supercapacitors, including superior material properties and electrode design. The material design principle can be extended to other material systems, implying its great potential for a variety of energy storage devices compatible with emerging flexible and wearable technologies.

Abstract: A method for the fabrication of h-WO3/WS2 core/shell nanowires and their use in flexible supercapacitor applications. The novel nanowire assemblies exhibit multifold advantages desired for high-performance supercapacitors, including superior material properties and electrode design. The material design principle can be extended to other material systems, implying its great potential for a variety of energy storage devices compatible with emerging flexible and wearable technologies.

Abstract: The invention is for fabricating large-area, thickness-modulated MoS2, varying from single to few layer MoS2 films on various substrates using a combination of magnetron sputtering followed by chemical vapor deposition. The thickness dependent energy bandgap engineering and surface induced polarity change is disclosed.