Patents by Inventor Nitin Deepak
Nitin Deepak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145230Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.Type: ApplicationFiled: October 28, 2022Publication date: May 2, 2024Applicant: Applied Materials, Inc.Inventors: Abhishek Mandal, Nitin Deepak, Geetika Bajaj, Ankur Kadam, Gopi Chandran Ramachandran, Suraj Rengarajan, Farhad K. Moghadam, Deenesh Padhi, Srinivas M. Satya, Manish Hemkar, Vijay Tripathi, Darshan Thakare
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Patent number: 11926903Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.Type: GrantFiled: June 9, 2022Date of Patent: March 12, 2024Assignee: Applied Materials, Inc.Inventors: Nitin Deepak, Tapash Chakraborty, Prerna Sonthalia Goradia, Visweswaren Sivaramakrishnan, Nilesh Chimanrao Bagul, Bahubali S. Upadhye
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Patent number: 11739429Abstract: Methods for refurbishing aerospace components by removing corrosion and depositing protective coatings are provided herein. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.Type: GrantFiled: June 4, 2021Date of Patent: August 29, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Mandal, Nitin Deepak, Neha Gupta, Prerna Sonthalia Goradia, Ankur Kadam, Kenichi Ohno, David Alexander Britz, Lance A. Scudder
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Patent number: 11702744Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.Type: GrantFiled: February 16, 2022Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Nitin Deepak, Gayatri Natu, Albert Barrett Hicks, III, Prerna Sonthalia Goradia, Jennifer Y. Sun
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Publication number: 20220396732Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.Type: ApplicationFiled: June 9, 2022Publication date: December 15, 2022Applicant: Applied Materials, Inc.Inventors: Nitin Deepak, Tapash Chakraborty, Prerna Sonthalia Goradia, Visweswaren Sivaramakrishnan, Nilesh Chimanrao Bagul, Bahubali S. Upadhye
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Patent number: 11424134Abstract: The present disclosure generally relates to methods for selectively etching copper, cobalt, and/or aluminum layers on a substrate semiconductor manufacturing applications. A substrate comprising one or more copper layers, cobalt layers, or aluminum layers is transferred to a processing chamber. The surface of the copper, cobalt, or aluminum layer is oxidized. The oxidized copper, cobalt, or aluminum surface is then exposed to hexafluoroacetylacetonate vapor. The hexafluoroacetylacetonate vapor reacts with the oxidized copper, cobalt, or aluminum surface to form a volatile compound, which is then pumped out of the chamber. The reaction of the oxidized copper, cobalt, or aluminum surface with the hexafluoroacetylacetonate vapor selectively atomic layer etches the copper, cobalt, or aluminum surface.Type: GrantFiled: August 27, 2020Date of Patent: August 23, 2022Assignee: Applied Materials, Inc.Inventors: Nitin Deepak, Prerna Sonthalia Goradia
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Publication number: 20220259735Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.Type: ApplicationFiled: February 16, 2022Publication date: August 18, 2022Applicant: Applied Materials, Inc.Inventors: Nitin Deepak, Gayatri Natu, Albert Barrett Hicks, III, Prerna Sonthalia Goradia, Jennifer Y. Sun
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Patent number: 11390947Abstract: A method of forming a fluorinated metal film is provided. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.Type: GrantFiled: February 25, 2020Date of Patent: July 19, 2022Assignee: Applied Materials, Inc.Inventors: Nitin Deepak, Suresh Chand Seth, Prerna Sonthalia Goradia, Geetika Bajaj, Darshan Thakare, Jennifer Y. Sun, Gayatri Natu
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Publication number: 20220162747Abstract: Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.Type: ApplicationFiled: November 18, 2021Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Tapash Chakraborty, Nitin Deepak, Prerna Sonthalia Goradia, Bahubali S. Upadhye, Nilesh Chimanrao Bagul, Subramanya P. Herle, Visweswaren Sivaramakrishnan
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Publication number: 20220081763Abstract: Embodiments of the present disclosure generally relate to protective coatings on turbocharger components, such as turbine wheels and compressor wheels, and other rotary equipment components and methods for depositing the protective coatings on such components. In one or more embodiments, a coated turbocharger component is provided and includes a metallic substrate containing a nickel-based alloy or superalloy, a cobalt-based alloy or superalloy, a stainless steel, or a titanium-aluminum alloy and a protective coating disposed on the metallic substrate. The protective coating contains an aluminum oxide having a purity of greater than 99 atomic percent (at %). In some examples, the metallic substrate is a turbine wheel, a compressor wheel, an impeller, a fan blade, a disk, a heat shield, a pulley, or a shaft.Type: ApplicationFiled: September 16, 2021Publication date: March 17, 2022Inventors: Nitin DEEPAK, Sarin Sundar JAINNAGAR KUPPUSWAMY, Sankalp PATIL, Sukti CHATTERJEE, David Masayuki ISHIKAWA, Prerna Sonthalia GORADIA, David Alexander BRITZ, Lance A. SCUDDER
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Publication number: 20220050051Abstract: Embodiments of the present disclosure generally relate to methods for detecting end-points of cleaning processes for aerospace components containing corrosion. The method includes exposing the aerospace component to a first solvent, exposing the aerospace component to a first water rinse, and analyzing a first aliquot of the first water rinse by absorbance spectroscopy to determine an intermediate solute concentration in the first aliquot, where the intermediate solute concentration is greater than a reference solute concentration.Type: ApplicationFiled: August 12, 2021Publication date: February 17, 2022Inventors: Abhishek MANDAL, Lance A. SCUDDER, David Alexander BRITZ, Kenichi OHNO, Nitin DEEPAK, Prerna Sonthalia GORADIA, Ankur KADAM
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Publication number: 20220037126Abstract: Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.Type: ApplicationFiled: August 3, 2020Publication date: February 3, 2022Inventors: Jennifer Y. Sun, Ren-Guan Duan, Gayatri Natu, Tae Won Kim, Jiyong Huang, Nitin Deepak, Paul Brillhart, Lin Zhang, Yikai Chen, Sanni Sinikka Seppälä, Ganesh Balasubramanian, JuanCarlos Rocha, Shankar Venkataraman, Katherine Elizabeth Woo
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Publication number: 20220002883Abstract: Embodiments of the present disclosure generally relate to methods for refurbishing aerospace components by removing corrosion and depositing protective coatings. In one or more embodiments, a method of refurbishing an aerospace component includes exposing the aerospace component containing corrosion to an aqueous cleaning solution. The aerospace component contains a nickel superalloy, an aluminide layer disposed on the nickel superalloy, and an aluminum oxide layer disposed on the aluminide layer. The method includes removing the corrosion from a portion of the aluminum oxide layer with the aqueous cleaning solution to reveal the aluminum oxide layer, then exposing the aluminum oxide layer to a post-rinse, and forming a protective coating on the aluminum oxide layer.Type: ApplicationFiled: June 4, 2021Publication date: January 6, 2022Inventors: Abhishek MANDAL, Nitin DEEPAK, Neha GUPTA, Prerna Sonthalia GORADIA, Ankur KADAM, Kenichi OHNO, David Alexander BRITZ, Lance A. SCUDDER
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Publication number: 20210381386Abstract: Embodiments of the present disclosure generally relate to oxide layer compositions for turbine engine components and methods for depositing the oxide layer compositions. In one or more embodiments, a turbine engine component includes a superalloy substrate and a bond coat disposed over the superalloy substrate. The turbine engine component includes an oxide layer disposed over the bond coat, where the oxide layer includes aluminum oxide and a metal dopant. The turbine engine component includes a thermal barrier coating disposed over the oxide layer.Type: ApplicationFiled: June 9, 2020Publication date: December 9, 2021Inventors: Nitin DEEPAK, Sarin Sundar JAINNAGAR KUPPUSWAMY, Prerna Sonthalia GORADIA, Sukti CHATTERJEE, Lance A. SCUDDER, Kenichi OHNO, Yuriy MELNIK, David Alexander BRITZ, Sankalp PATIL, Ankur KADAM, Abhishek MANDAL
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Publication number: 20210090897Abstract: The present disclosure generally relates to methods for selectively etching copper, cobalt, and/or aluminum layers on a substrate semiconductor manufacturing applications. A substrate comprising one or more copper layers, cobalt layers, or aluminum layers is transferred to a processing chamber. The surface of the copper, cobalt, or aluminum layer is oxidized. The oxidized copper, cobalt, or aluminum surface is then exposed to hexafluoroacetylacetonate vapor. The hexafluoroacetylacetonate vapor reacts with the oxidized copper, cobalt, or aluminum surface to form a volatile compound, which is then pumped out of the chamber. The reaction of the oxidized copper, cobalt, or aluminum surface with the hexafluoroacetylacetonate vapor selectively atomic layer etches the copper, cobalt, or aluminum surface.Type: ApplicationFiled: August 27, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Nitin DEEPAK, Prerna Sonthalia GORADIA
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Publication number: 20200400990Abstract: Embodiments described herein relate to flat optical devices and methods of forming flat optical devices. One embodiment includes a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d, and a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first encapsulation layer is disposed over the first arrangement of the first plurality of pillars. The first encapsulation layer has a refractive index of about 1.0 to about 1.5. The first encapsulation layer, the substrate, and each of the pillars of the first arrangement define a first space therebetween. The first space has a refractive index of about 1.0 to about 1.5.Type: ApplicationFiled: June 18, 2020Publication date: December 24, 2020Applicant: Applied Materials, Inc.Inventors: Ludovic GODET, Tapashree ROY, Prerna Sonthalia GORADIA, Srobona SEN, Robert Jan VISSER, Nitin DEEPAK, Tapash CHAKRABORTY
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Publication number: 20200283897Abstract: Embodiments described herein provide a method of forming amorphous a fluorinated metal film. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.Type: ApplicationFiled: February 25, 2020Publication date: September 10, 2020Inventors: Nitin DEEPAK, Suresh Chand SETH, Prerna Sonthalia GORADIA, Geetika BAJAJ, Darshan THAKARE, Jennifer Y. SUN, Gayatri NATU
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Patent number: 10497573Abstract: Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.Type: GrantFiled: March 13, 2018Date of Patent: December 3, 2019Assignee: Applied Materials, Inc.Inventors: Prerna Sonthalia Goradia, Fei Wang, Geetika Bajaj, Nitin Ingle, Zihui Li, Robert Jan Visser, Nitin Deepak
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Publication number: 20190287808Abstract: Precursors, such as interhalogens and/or compounds formed of noble gases and halogens, may be supplied in a gaseous form to a semiconductor processing chamber at a predetermined amount, flow rate, pressure, and/or temperature in a cyclic manner such that atomic layer etching of select semiconductor materials may be achieved in each cycle. In the etching process, the element of the precursor that has a relatively higher electronegativity may react with select semiconductor materials to form volatile etching byproducts. The element of the precursor that has a relatively lower electronegativity may form a gas that may be recycled to re-form an precursor with one or more halogen-containing materials using a plasma process.Type: ApplicationFiled: March 13, 2018Publication date: September 19, 2019Applicant: Applied Materials, Inc.Inventors: Prerna Sonthalia Goradia, Fei Wang, Geetika Bajaj, Nitin Ingle, Zihui Li, Robert Jan Visser, Nitin Deepak
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Patent number: 9869205Abstract: A housing for retention of the outer race of a bearing of a gas turbine engine includes an arrangement of spring fingers that yields a lightweight housing capable of withstanding very high radial loads combined with very high torsional windup and axial thrust load. Controlled circumferential gaps on both sides of each spring finger limit the deflection and self-arrest the distortion of the housing. An axial gap is created on the aft end by a portion of the spring finger beam structure that opposes an axial face of the housing and limits the axial distortion. A radial gap created between interface hardware of the housing and the inner retention housing also acts to retain the spring finger housing under load in a radial direction.Type: GrantFiled: November 23, 2015Date of Patent: January 16, 2018Assignee: General Electric CompanyInventors: Ravindra Shankar Ganiger, Bruce Alan Carter, Nitin Deepak Rupnar, Charles Andrew Corman