Patents by Inventor Niveditha Manjunath

Niveditha Manjunath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Complementary resistance switch, contact-connected polycrystalline piezo- or ferroelectric thin-film layer, method for encrypting a bit sequence
    Patent number: 9812640
    Abstract: Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11?, 11?) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: November 7, 2017
    Assignee: Helmholtz-Zentrum Dresden-Rossendorf e.V
    Inventors: Tiangui You, Heidemarie Schmidt, Nan Du, Danilo Buerger, Ilona Skorupa, Niveditha Manjunath
  • COMPLEMENTARY RESISTANCE SWITCH, CONTACT-CONNECTED POLYCRYSTALLINE PIEZO- OR FERROELECTRIC THIN-FILM LAYER, METHOD FOR ENCRYPTING A BIT SEQUENCE
    Publication number: 20150358151
    Abstract: Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11?, 11?) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (0), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.
    Type: Application
    Filed: July 16, 2015
    Publication date: December 10, 2015
    Inventors: Tiangui You, Heidemarie Schmidt, Nan Du, Danilo Buerger, Ilona Skorupa, Niveditha Manjunath