Patents by Inventor No Gil Park

No Gil Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7071123
    Abstract: Provided is a method for fabricating an organic semiconductor transistor having an organic polymeric gate insulating layer. The method includes forming an organic gate insulating layer on a substrate by a vapor deposition method using organic monomer sources, and causing a polymerization reaction to occur in the organic gate insulating layer to complete an organic polymeric gate insulating layer. Since the vapor deposition method, which is a low-temperature dry-type technique, is employed, the organic polymeric gate insulating layer can be uniformly formed on a large-area substrate by a simplified in-situ process.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: July 4, 2006
    Assignee: Gracel Display Inc.
    Inventors: Jae Hoon Shim, Sung Min Kim, Bong Ok Kim, No Gil Park, Mi Young Kwak, Young Kwan Kim
  • Patent number: 7056838
    Abstract: Provided is a method for fabricating an organic semiconductor transistor having an organic polymeric gate insulating layer. The method includes forming an organic gate insulating layer on a substrate by a vapor deposition method using organic monomer sources, and causing a polymerization reaction to occur in the organic gate insulating layer to complete an organic polymeric gate insulating layer. Since the vapor deposition method, which is a low-temperature dry-type technique, is employed, the organic polymeric gate insulating layer can be uniformly formed on a large-area substrate by a simplified in-situ process.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: June 6, 2006
    Inventors: Jae Hoon Shim, Sung Min Kim, Bong Ok Kim, No Gil Park, Mi Young Kwak, Young Kwan Kim
  • Publication number: 20050266629
    Abstract: Provided is a method for fabricating an organic semiconductor transistor having an organic polymeric gate insulating layer. The method includes forming an organic gate insulating layer on a substrate by a vapor deposition method using organic monomer sources, and causing a polymerization reaction to occur in the organic gate insulating layer to complete an organic polymeric gate insulating layer. Since the vapor deposition method, which is a low-temperature dry-type technique, is employed, the organic polymeric gate insulating layer can be uniformly formed on a large-area substrate by a simplified in-situ process.
    Type: Application
    Filed: August 4, 2005
    Publication date: December 1, 2005
    Inventors: Jae Hoon Shim, Sung Min Kim, Bong Ok Kim, No Gil Park, Mi Young Kwak, Young Kwan Kim
  • Publication number: 20040191951
    Abstract: Provided is a method for fabricating an organic semiconductor transistor having an organic polymeric gate insulating layer. The method includes forming an organic gate insulating layer on a substrate by a vapor deposition method using organic monomer sources, and causing a polymerization reaction to occur in the organic gate insulating layer to complete an organic polymeric gate insulating layer. Since the vapor deposition method, which is a low-temperature dry-type technique, is employed, the organic polymeric gate insulating layer can be uniformly formed on a large-area substrate by a simplified in-situ process.
    Type: Application
    Filed: February 23, 2004
    Publication date: September 30, 2004
    Inventors: Jae Hoon Shim, Sung Min Kim, Bong Ok Kim, No Gil Park, Mi Young Wak, Young Kwan Kim