Abstract: An end point detection window prevents process failures in a plasma etching device. The end point detection window has a body of aluminum or an aluminum alloy through which a hole extends to provide a path along which light generated during the etching process can pass from the process chamber, and a capping section coupled to a light outlet of the body. The capping section is of quartz for allowing the light passing through the hole in the body to be transmitted out of the process chamber.

Abstract: An induction magnet for use in semiconductor device manufacturing equipment is formed of an insulating magnetic material. The semiconductor device manufacturing equipment may include a reaction chamber having a plasma region in which plasma is produced, a substrate support disposed in the reaction chamber, a gas supplier that sprays reaction gas uniformly towards the substrate support, and a power supply for supplying a high frequency that excites the reaction gas to produce plasma in the plasma region. The induction magnet is disposed around the plasma region at the outside of the reaction chamber. Because of the composition of the induction magnet, the semiconductor manufacturing equipment does not overheat even though power having a high frequency is applied to the induction magnet. As a result, the semiconductor device manufacturing equipment can perform a manufacturing process with a high degree of productivity.

Abstract: A gas injector is designed to better withstand the conditions inside a semiconductor manufacturing apparatus, such as a plasma etching apparatus. The gas injector includes a body in the form of a block of ceramic material, and a gas injection section formed by first and second gas injection holes extending through the block of ceramic material. The block of ceramic material has a first cylindrical portion and a second cylindrical portion extending from the first cylindrical portion. The first cylindrical portion is wider and longer than the second cylindrical portion. The first holes of the gas injecting section extend through the first cylindrical portion of the block of ceramic material, whereas the second holes extend through the second cylindrical portion contiguously each from a respective one of the first holes and concentric therewith. The first holes are also wider and longer than the second holes. The gas injector is disposed at an upper portion of a plasma etching apparatus.

Abstract: A method of forming contacts of a semiconductor device while improving a step coverage and increasing margins between the device and an adjacent device. The novel method comprises the steps of forming an interlayer insulating film. A contact hole is formed in the interlayer insulating film. A mask layer is deposited over the contact hole to a thickness sufficient to withstand the planarization process and is planarization-etched. Wet-etching is performed over the entire semiconductor substrate, thereby etching the interlayer insulating film, wherein the wet-etching is characterized in that exposed portions of the interlayer insulating film outside of the contact hole and interfacing the mask layer are etched faster than other upper exposed portions of the interlayer insulating film. As a result, the contact hole has a sloped-sidewalls profile.