Abstract: Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell including an N-layer with a controlled carbon content. A tandem photovoltaic device, comprising, in this superimposition order: A/ a silicon-based sub-cell A, in particular a silicon heterojunction sub-cell or a TOPCon architecture sub-cell; and B/ a perovskite-based sub-cell B, comprising at least: —an N-type conductive or semiconductor layer (ETL); —a P-type conductive or semiconductor layer (HTL); and —a perovskite-type active layer, interposed between said N-type and P-type conductive or semiconductor layers, wherein the N-type conductive or semiconductor layer is based on individualised nanoparticles of N-type metal oxide(s), and has an atomic carbon content lower than or equal to 20%.

Abstract: Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a P- or N-type material/perovskite composite layer including: A/a silicon-based sub-cell A; and B/a perovskite-based sub-cell B, comprising at least: —a conductive or semiconductor layer of the N type in the case of a NIP structure, or of the P type in the case of a PIN structure, and—a composite layer, superimposed over the lower conductive or semiconductor layer, comprising at least one perovskite material and at least one material of the P type in the case of a NIP structure or of the N type material in the case of a PIN structure

Abstract: A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ2, with X, Y and Z = I, Br, and an FAC1 additive, the molar ratio of cesium to lead is between approximately 4 % and 22%, the molar ratio of FAC1 relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type CsxFA(1-x+w)Pb(IyBr(1-y))3 with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).

Abstract: The invention concerns a solution of tungstate ions W6+ (VI) comprising as solvent at least one optionally partly etherified polyalcohol, a preparation method and uses thereof. The invention further concerns a layer comprising at least one tungsten oxide WOz comprising one or more polyoxotungstate complexes, methods for preparing the same and uses thereof, and in particular a photovoltaic device comprising said layer of material.

Abstract: Organic or hybrid electronic device, having an NIP structure, such as an organic light-emitting diode, an organic photodetector, or an organic photovoltaic cell, comprising successively: a transparent substrate, a first transparent and electrically conducting electrode, an N type layer, an active layer comprising a polyethylenimine and: an electron donor material and an electron acceptor material, or a perovskite material, a P type layer, and a second electrode.

Abstract: Organic or hybrid electronic device, having an NIP structure, such as an organic light-emitting diode, an organic photodetector, or an organic photovoltaic cell, comprising successively: a transparent substrate, a first transparent and electrically conducting electrode, an N type layer, an active layer comprising a polyethylenimine and: an electron donor material and an electron acceptor material, or a perovskite material, a P type layer, and a second electrode.

Abstract: The invention concerns a solution of tungstate ions W6+ (VI) comprising as solvent at least one optionally partly etherified polyalcohol, a preparation method and uses thereof. The invention further concerns a layer comprising at least one tungsten oxide WOz comprising one or more polyoxotungstate complexes, methods for preparing the same and uses thereof, and in particular a photovoltaic device comprising said layer of material.

Abstract: An organic electronic device containing a stack successively including a polymer substrate covered with a first layer E1 made of conductive or semiconductor material; a hole transport layer HTL; an active layer A; and a second layer E2 made of conductive or semiconductor material. The HTL layer is a bilayer formed of a so-called neutral layer based on PEDOT:PSS and of a so-called acid layer based on PEDOT:PSS. The neutral layer is in contact with first layer E1 while the acid layer is in contact with active layer A.

Abstract: The electrically active layer of an organic heterojunction solar cell is associated with an additional layer, so as to promote the vertical segregation between the p-type organic semiconductor material and the n-type carbonaceous semiconductor material that are present in the electrically active layer. The additional layer is in direct contact with the electrically active layer. Said additional layer comprises a compound forming noncovalent interactions with the n-type semiconductor carbonaceous material. In particular, said compound can be P4VP when the electrically active layer is formed of a mixture of P3HT:PCBM. Moreover, said additional layer comprises a n-type semiconductor material.

Abstract: The invention concerns a white electroluminescent organic diode, providing, under the effect of electrical polarization, a white light composed of a mixture of at least one first colour and a second colour emitted respectively by a first phosphorous material and by a second phosphorous material.