Abstract: A device having a stack includes an image sensor in MOS technology adapted to detect a radiation; a first lens array; a structure formed of at least a first matrix of openings delimited by walls opaque to the radiation; and a second lens array.

Abstract: An optical filter for an image sensor includes first opaque zones. Each of the first opaque zones occupies a surface area equal to the surface area of at least one first lens in this same first zone.

Abstract: An image sensor includes first pixels and second pixels. The second pixels of the image sensor are distinct from the first pixels of the image sensor.

Abstract: An electro-optical device for a matrix image sensor, has thin-film transistors and organic detectors, which integrates a line driver circuit, with thin-film transistors in a peripheral area. A light screen is provided on a topological level supported by a dielectric layer above the thin-film transistors, which are individual screens, for each pixel in a matrix area, and a general screen for all the transistors of the driver circuit. The general screen in the peripheral area is further used as an interconnection structure to bias an upper electrode of the organic photodiodes of an active area to a bias voltage, by an overlapping in direct contact. In the active area, a topological level of the upper electrode is separated from the topological level of a pixel electrode by an active organic structure. In the peripheral area, these two topological levels are present and formed directly on each other, with no interposition.