Abstract: In one aspect, a dual double-pinned spin valve element includes a first spin valve that includes a first pinned layer and a second pinned layer and a second spin valve disposed on the first spin valve and comprising a third pinned layer and a fourth pinned layer. The first, second, third and fourth pinned layers each have a magnetization in a first direction.

Abstract: A sensor including: a substrate having a first region and a second region; a first series of first magnetoresistive (MR) elements formed on the substrate, the first series of first MR elements including at least two first MR elements; and a second series of second MR elements that is coupled in parallel with the first series of first MR elements to form a bridge circuit, the second series of second MR elements being formed on the substrate, the second series of second MR elements including at least two second MR elements, each of the at least two second MR elements having a different pinning direction than each of the at least two first MR elements, wherein one of the at least two first MR elements and one of the at least two second MR elements are formed in the first region of the substrate and have different pinning directions.

Abstract: A sensor is provided comprising: a substrate having a first region and a second region; a first series of first magnetoresistive (MR) elements formed on the substrate, the first series of first MR elements including at least two first MR elements; a second series of second MR elements formed on the substrate, the second series of second MR elements being electrically coupled to the first series of MR elements to form a bridge circuit, the second series of MR elements including at least two second MR elements, each of the second MR elements having a different pinning direction than at least one of the first MR elements, wherein one of the first MR elements and one of the second MR elements are formed in the first region of the substrate and have different pinning directions.

Abstract: In one aspect, a dual double-pinned spin valve element includes a first spin valve that includes a first pinned layer and a second pinned layer and a second spin valve disposed on the first spin valve and comprising a third pinned layer and a fourth pinned layer. The first, second, third and fourth pinned layers each have a magnetization in a first direction.

Abstract: A current sensor can indirectly measure a sensed current by directly measuring static perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic fields generated by perturbing coils. The sensed current can be indirectly measured by modulating or changing sensitivities of the magnetoresistance elements in a way that is directly related to the sensed current.

Abstract: Systems and methods described herein provide a current sensor based on magnetic field detection having multiple sensor arrangements with multiple, different sensitivity ranges. The outputs of the multiple sensor arrangements can be combined to generate a single output signal. The current sensor can include two or more sensor arrangements, each having one or more magnetic field sensing elements, and configured to sense a magnetic field in different first measurement ranges corresponding to different ranges of currents through the conductor and further configured to generate different magnetic field signals indicative of the sensed magnetic field in the respective measurement range. The current sensor can include a circuit configured to generate an output signal indicative of a combination of the different magnetic field signals that corresponds to the current through the conductor.

Abstract: A sensor is provided comprising: a substrate having a first region and a second region; a first series of first magnetoresistive (MR) elements formed on the substrate, the first series of first MR elements including at least two first MR elements; a second series of second MR elements formed on the substrate, the second series of second MR elements being electrically coupled to the first series of MR elements to form a bridge circuit, the second series of MR elements including at least two second MR elements, each of the second MR elements having a different pinning direction than at least one of the first MR elements, wherein one of the first MR elements and one of the second MR elements are formed in the first region of the substrate and have different pinning directions.

Abstract: A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and sixty degrees relative to the first maximum response axis. The magnetic field sensor can also include a second magnetoresistance element disposed over the substrate and including a second maximum response axis parallel to the first maximum response axis and a second bias layer structure configured to generate a second bias magnetic field with a second magnetic direction parallel to the first magnetic direction and opposed to the first magnetic direction. The first and second magnetoresistance elements can each have a pair of electrical contacts for coupling to circuits.

Abstract: Systems and methods described herein provide a current sensor based on magnetic field detection having multiple sensor arrangements with multiple, different sensitivity ranges. The outputs of the multiple sensor arrangements can be combined to generate a single output signal. The current sensor can include two or more sensor arrangements, each having one or more magnetic field sensing elements, and configured to sense a magnetic field in different first measurement ranges corresponding to different ranges of currents through the conductor and further configured to generate different magnetic field signals indicative of the sensed magnetic field in the respective measurement range. The current sensor can include a circuit configured to generate an output signal indicative of a combination of the different magnetic field signals that corresponds to the current through the conductor.

Abstract: A current sensor can indirectly measure a sensed current by directly measuring static perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic fields generated by perturbing coils. The sensed current can be indirectly measured by modulating or changing sensitivities of the magnetoresistance elements in a way that is directly related to the sensed current.

Abstract: A current sensor can indirectly measure a sensed current by directly measuring static perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic fields generated by perturbing coils. The sensed current can be indirectly measured by modulating or changing sensitivities of the magnetoresistance elements in a way that is directly related to the sensed current.

Abstract: A magnetic field sensor can include a substrate, a first magnetoresistance element disposed over the substrate and including a first maximum response axis and a first bias layer structure configured to generate a first bias magnetic field with a first magnetic direction between ninety degrees and sixty degrees relative to the first maximum response axis. The magnetic field sensor can also include a second magnetoresistance element disposed over the substrate and including a second maximum response axis parallel to the first maximum response axis and a second bias layer structure configured to generate a second bias magnetic field with a second magnetic direction parallel to the first magnetic direction and opposed to the first magnetic direction. The first and second magnetoresistance elements can each have a pair of electrical contacts for coupling to circuits.

Abstract: A current sensor can indirectly measure a sensed current by directly measuring static perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic fields generated by perturbing coils. The sensed current can be indirectly measured by modulating or changing sensitivities of the magnetoresistance elements in a way that is directly related to the sensed current.