Abstract: Provided is an inductively coupled plasma etching apparatus comprising: a reaction chamber having an inner space to which a gas source is provided; an upper coil part for inducing an electric field into the inner space of the reaction chamber and configured to form an inductively coupled plasma from the gas source by the electric field; a mounting part which faces the upper coil part and on which an object to be etched by the inductively coupled plasma is disposed; and a lower electrode part provided on the lower side of the mounting part to induce at least any one of ions and neutral active species constituting the inductively coupled plasma and involved in etching toward the object to be etched disposed on the mounting part, wherein the frequency of the lower electrode part is lower than the frequency of the upper coil part.