Patents by Inventor No Won PARK

No Won PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11980099
    Abstract: A transition dichalcogenide homojunction structure may include a lower high resistance layer including a plurality of PtX2 layers and an upper low resistance layer which includes the plurality of PtX2 layers and has different thickness and number of growth layers from the lower high resistance layer. And the lower high resistance layer and the upper low resistance layer may form a homojunction. The heat transfer characteristic of the lower high resistance layer may increase by the interface induced Seebeck effect with the upper low resistance layer. The transition dichalcogenide homojunction structure may generate the interface induced Seebeck effect at the interface of the homojunction to generate a thermal voltage. Further, the transition metal dichalcogenide homojunction structure may measure the Seebeck effect of the lower high resistance layer using the upper low resistance layer without separate measurement equipment.
    Type: Grant
    Filed: December 19, 2022
    Date of Patent: May 7, 2024
    Assignee: CHUNG ANG UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION
    Inventors: Sang Kwon Lee, No Won Park, Jae Won Choi
  • Publication number: 20240107886
    Abstract: A transition dichalcogenide homojunction structure may include a lower high resistance layer including a plurality of PtX2 layers and an upper low resistance layer which includes the plurality of PtX2 layers and has different thickness and number of growth layers from the lower high resistance layer. And the lower high resistance layer and the upper low resistance layer may form a homojunction. The heat transfer characteristic of the lower high resistance layer may increase by the interface induced Seebeck effect with the upper low resistance layer. The transition dichalcogenide homojunction structure may generate the interface induced Seebeck effect at the interface of the homojunction to generate a thermal voltage. Further, the transition metal dichalcogenide homojunction structure may measure the Seebeck effect of the lower high resistance layer using the upper low resistance layer without separate measurement equipment.
    Type: Application
    Filed: December 19, 2022
    Publication date: March 28, 2024
    Inventors: Sang Kwon LEE, No Won PARK, Jae Won CHOI
  • Publication number: 20240091730
    Abstract: The present invention relates to the stabilization of an effective ingredient by using a mineral material. In the present invention, the effective ingredient can be stably supported using the mineral material, and a microcapsule obtained by the manufacturing method according to the present invention, when discharged to nature, causes no environmental problems due to encapsulation ingredients thereof being the same as soil ingredients, and thus can avoid micro-plastic issues.
    Type: Application
    Filed: December 28, 2021
    Publication date: March 21, 2024
    Applicants: LG HOUSEHOLD & HEALTH CARE LTD., IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
    Inventors: Jun Seok YEOM, Eun Chul CHO, Ji Won LIM, Hyo Jin BONG, Seon A JEONG, No Jin PARK, Woo Sun SHIM