Patents by Inventor NOAM LIVNE

NOAM LIVNE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240037233
    Abstract: A storage system, including a host device; and a storage device including a memory and at least one processor configured to implement a storage internal protection (SIP) module, wherein the SIP module is configured to: obtain, from the host device, a plurality of storage commands corresponding to the memory, filter the plurality of storage commands to obtain a filtered plurality of storage commands, apply information about the filtered plurality of storage commands to a machine-learning ransomware detection algorithm, and based on the machine-learning ransomware detection algorithm indicating that a ransomware operation is detected, provide a notification to the host device.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ariel DOUBCHAK, Noam LIVNE, Amit BERMAN
  • Patent number: 10922025
    Abstract: A memory system including a nonvolatile memory (NVM) device and a controller is provided. The NVM device includes a main region and a spare region. The controller writes write data to a selected row of the main region, determines whether the written row is bad, and writes the write data to a spare address in the spare region and writes the spare address to the bad row, when the written row is determined to be bad.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: February 16, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Amit Berman, Ariel Doubchak, Noam Livne
  • Publication number: 20210019082
    Abstract: A memory system including a nonvolatile memory (NVM) device and a controller is provided. The NVM device includes a main region and a spare region. The controller writes write data to a selected row of the main region, determines whether the written row is bad, and writes the write data to a spare address in the spare region and writes the spare address to the bad row, when the written row is determined to be bad.
    Type: Application
    Filed: July 17, 2019
    Publication date: January 21, 2021
    Inventors: AMIT BERMAN, ARIEL DOUBCHAK, NOAM LIVNE
  • Patent number: 10860233
    Abstract: A memory system may include a memory device configured to store data received from a host; and a memory controller configured to, receive a received block of the data and a logical address associated with the data from the host, detect at least one halves of the received block as being duplicate halves based on whether a respective one of the at least one halves of the received block match one or more existing halves of stored blocks stored in the memory device, selectively store the at least one halves of the received block in the memory device based on whether the respective one of the at least one halves are duplicate halves such that the duplicate halves of the received block are not stored in the memory device, and store metadata associated with retrieving the received block.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: December 8, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Noam Livne, Jun Jin Kong
  • Publication number: 20200326869
    Abstract: A memory system may include a memory device configured to store data received from a host; and a memory controller configured to, receive a received block of the data and a logical address associated with the data from the host, detect at least one halves of the received block as being duplicate halves based on whether a respective one of the at least one halves of the received block match one or more existing halves of stored blocks stored in the memory device, selectively store the at least one halves of the received block in the memory device based on whether the respective one of the at least one halves are duplicate halves such that the duplicate halves of the received block are not stored in the memory device, and store metadata associated with retrieving the received block.
    Type: Application
    Filed: April 12, 2019
    Publication date: October 15, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Noam LIVNE, Jun Jin Kong
  • Patent number: 10783970
    Abstract: A method for performing a write operation in a random access memory (RAM) includes selecting a target block in a RAM with a greatest number of invalid pages, reading valid pages from target block, when a number of invalid pages is greater than a predetermined threshold, performing a bitline-wise block erase of the target block in said RAM, and copying-back valid data to the erased target block in a row-by-row set operation, wherein the erased target block is written with the valid data. Performing the bitline-wise block erase includes sequentially powering on each bitline with a predetermined reset voltage where all other bitlines and wordlines are grounded.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: September 22, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Amit Berman, Ariel Doubchak, Noam Livne
  • Publication number: 20200194080
    Abstract: A method for performing a write operation in a random access memory (RAM) includes selecting a target block in a RAM with a greatest number of invalid pages, reading valid pages from target block, when a number of invalid pages is greater than a predetermined threshold, performing a bitline-wise block erase of the target block in said RAM, and copying-back valid data to the erased target block in a row-by-row set operation, wherein the erased target block is written with the valid data. Performing the bitline-wise block erase includes sequentially powering on each bitline with a predetermined reset voltage where all other bitlines and wordlines are grounded.
    Type: Application
    Filed: December 12, 2018
    Publication date: June 18, 2020
    Inventors: AMIT BERMAN, Ariel Doubchak, Noam Livne
  • Patent number: 10262728
    Abstract: A method for storing data multi-level cell (MLC) memory includes receiving data to be stored. The received data is divided into units of x bits, where x is an integer greater than or equal to 3. Each of the units of x bits is stored over a span of y memory cells of the MLC memory. Here, y is an integer greater than or equal to 2. At least one bit of each of the x bits is stored only partially in a first memory cell of the span of y memory cells and the at least one bit is also stored, only partially, in a second memory cell of the span of y memory cells such that the at least one bit cannot be interpreted without reading both the first and second memory cell of the span of y memory cells.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: April 16, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Iddo Naiss, Noam Livne, Elona Erez, Jun Jin Kong
  • Publication number: 20180102168
    Abstract: A method for storing data multi-level cell (MLC) memory includes receiving data to be stored. The received data is divided into units of x bits, where x is an integer greater than or equal to 3. Each of the units of x bits is stored over a span of y memory cells of the MLC memory. Here, y is an integer greater than or equal to 2. At least one bit of each of the x bits is stored only partially in a first memory cell of the span of y memory cells and the at least one bit is also stored, only partially, in a second memory cell of the span of y memory cells such that the at least one bit cannot be interpreted without reading both the first and second memory cell of the span of y memory cells.
    Type: Application
    Filed: October 7, 2016
    Publication date: April 12, 2018
    Inventors: IDDO NAISS, NOAM LIVNE, ELONA EREZ, JUN JIN KONG