Patents by Inventor Noam Sivan

Noam Sivan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9503088
    Abstract: The invention provides a method for recovering NBTI/PBTI related parameter degradation in MOSFET devices. The method includes operating the at least one MOSFET device in a standby mode, exiting the at least one MOSFET device from the standby mode, holding the at least one MOSFET device in an active state for a predetermined time span after exiting the standby mode, and operating the at least one MOSFET device in an operational mode after the predetermined time span has elapsed.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: November 22, 2016
    Assignee: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Sergey Sofer, Michael Priel, Noam Sivan
  • Patent number: 9459651
    Abstract: A multi-level clock signal distribution network comprises a plurality of lower network levels comprising at least a first lower network level and a lowermost network level that is connected to one or more lowermost clock signal driving circuits connectable to receive a clock signal; and a topmost network level arranged to distribute the clock signal to a plurality of clocked circuits, and connected to a plurality of topmost clock signal driving circuits connected to receive the clock signal from the first lower network level. The lowermost network level comprises at least one net and each of the plurality of lower network levels except the lowermost network level comprises a plurality of nets and is connected to a corresponding plurality of lower clock signal driving circuits being connected to receive the clock signal from a subjacent one of the plurality of lower network levels, wherein each of the plurality of nets is driven by all nets of the subjacent one.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: October 4, 2016
    Assignee: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Lior Moheban, Avi Elazary, Amir Nave, Noam Sivan
  • Publication number: 20150333754
    Abstract: The invention provides a method for recovering NBTI/PBTI related parameter degradation in MOSFET devices. The method includes operating the at least one MOSFET device in a standby mode, exiting the at least one MOSFET device from the standby mode, holding the at least one MOSFET device in an active state for a predetermined time span after exiting the standby mode, and operating the at least one MOSFET device in an operational mode after the predetermined time span has elapsed.
    Type: Application
    Filed: January 10, 2013
    Publication date: November 19, 2015
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Sergey SOFER, Michael PRIEL, Noam SIVAN
  • Publication number: 20140247080
    Abstract: A multi-level clock signal distribution network comprises a plurality of lower network levels comprising at least a first lower network level and a lowermost network level that is connected to one or more lowermost clock signal driving circuits connectable to receive a clock signal; and a topmost network level arranged to distribute the clock signal to a plurality of clocked circuits, and connected to a plurality of topmost clock signal driving circuits connected to receive the clock signal from the first lower network level. The lowermost network level comprises at least one net and each of the plurality of lower network levels except the lowermost network level comprises a plurality of nets and is connected to a corresponding plurality of lower clock signal driving circuits being connected to receive the clock signal from a subjacent one of the plurality of lower network levels, wherein each of the plurality of nets is driven by all nets of the subjacent one.
    Type: Application
    Filed: November 4, 2011
    Publication date: September 4, 2014
    Applicant: FREESCALE SEMICONDUCTOR, INC.
    Inventors: Lior Moheban, Avi Elazary, Amir Nave, Noam Sivan
  • Patent number: 8432209
    Abstract: A device that includes a dual edge triggered flip-flop that has state retention capabilities, the dual edge triggered flip-flop includes: a retention latch that includes a first inverter, a second inverter and a first transfer gate; wherein the first and second inverters receive power during a power gating period; a second latch that includes a third inverter, a fourth inverter and a second transfer gate; wherein the third and fourth inverters are powered down during a power gating period; a third transfer gate that is coupled between input nodes of the retention latch and the second latch; wherein the third transfer gate is opened during the power gating period; wherein the first transfer gate is controlled by a control signal and the second transfer gate is controlled by an inverted control signal; wherein the retention latch stores, at the end of the power gating period a retention value; wherein the retention value is selected, in response to a value of the control signal when the power gating period star
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: April 30, 2013
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Sergey Sofer, Vlad Goldman, Noam Sivan
  • Patent number: 7620760
    Abstract: A device that includes: a first bus, connected between a first logic and a first circuit; a group of second buses connected between the first logic and between multiple non-high impedance circuit access logics associated with multiple circuits; wherein each circuit access logic is adapted to: (i) provide to the first logic, a circuit write value during a circuit writing period and during an idle period that follows the circuit writing period and ends when another circuit is allowed to write; and (ii) provide a default value when another circuit is allowed to write; and wherein the first logic is adapted to alter a state of the first bus in response to a change between two consecutive circuit write values.
    Type: Grant
    Filed: February 7, 2005
    Date of Patent: November 17, 2009
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Kostantin Godin, Moshe Anschel, Yacov Efrat, Leonid Rabinovich, Noam Sivan, Eitan Zmora, Ziv Zamsky
  • Publication number: 20080140894
    Abstract: A device that includes: a first bus, connected between a first logic and a first circuit; a group of second buses connected between the first logic and between multiple non-high impedance circuit access logics associated with multiple circuits; wherein each circuit access logic is adapted to: (i) provide to the first logic, a circuit write value during a circuit writing period and during an idle period that follows the circuit writing period and ends when another circuit is allowed to write; and (ii) provide a default value when another circuit is allowed to write; and wherein the first logic is adapted to alter a state of the first bus in response to a change between two consecutive circuit write values.
    Type: Application
    Filed: February 7, 2005
    Publication date: June 12, 2008
    Applicant: Freescale Semiconductor, Inc
    Inventors: Kostantin Godin, Mosche Anschel, Yacov Efrat, Leonid Rabinovich, Noam Sivan, Eitan Zmora, Ziv Zamsky
  • Patent number: 6757701
    Abstract: A method and apparatus for implementing a linearly approximated Log MAP algorithm, the implementation involves calculating MAX*(a(n),b(n)) function, the method having the steps of: (A) Receiving a(n), b(n) and a value DE; (B) calculating (a(n)+b(n)+DE/2 and generating at least one intermediate result, the at least one intermediate result reflecting at least one relationship between at least two elements out of a(n), b(n) and DE; and (C) providing an MAX*(a(n),b(n)) result selected from a group comprising of a(n), b(n) or (a(n)+b(n)+DE)/2, the selection dependent upon the at least one intermediate result.
    Type: Grant
    Filed: August 3, 2001
    Date of Patent: June 29, 2004
    Assignee: Motorola, Inc.
    Inventors: Noam Sivan, Fabrice Aidan, Gregory Leshin
  • Publication number: 20020018533
    Abstract: A method and apparatus for implementing a linearly approximated Log MAP algorithm, said implementation involves calculating MAX*(a(n),b(n)) function, said method comprising the steps of: (A) Receiving a(n), b(n) and DE; (B) calculating (a(n)+b(n)+DE)/2 and generating at least one intermediate result, said at least one intermediate result reflecting at least one relationship between at least two elements out of a(n), b(n) and DE; and (C) providing an MAX*(a(n),b(n)) result selected from a group comprising of a(n), b(n) or (a(n)+b(n)+DE)/2, said selection dependent upon the at least one intermediate result.
    Type: Application
    Filed: August 3, 2001
    Publication date: February 14, 2002
    Inventors: Noam Sivan, Fabrice Aidan, Gregory Leshin